低温磁控溅射制备AZO薄膜及绒面研究

发布时间：2018-03-10 07:06

本文选题：直流射频耦合磁控溅射　切入点：AZO薄膜　出处：《稀有金属材料与工程》2017年03期 　论文类型：期刊论文

【摘要】：采用直流射频耦合磁控溅射技术,以氧化锌掺铝(AZO,2%Al_2O_3,质量分数)陶瓷靶为靶材,在玻璃基片上低温沉积AZO薄膜,并采用质量分数为0.5%的HCl溶液刻蚀制备绒面AZO薄膜,通过XRD、SEM、分光光度计、霍尔效应测试系统、光电雾度仪等设备重点研究工作压强对直流射频耦合磁控溅射制备AZO薄膜的晶相结构、表面形貌、光电性能以及后期制绒的影响。研究表明,直流射频耦合磁控溅射可以在低温下制备性能优异的AZO薄膜,且随着工作压强的减小,致密性增强,光电性能改善,后期刻蚀得到具有良好陷光作用的绒面结构。在工作压强0.5 Pa下,低温制备的AZO薄膜电阻率达到3.55×10~(-4)Ω·cm,薄膜可见光透过达到88.36%,刻蚀后电阻率为4.19×10~(-4)Ω·cm,可见光透过率89.59%,雾度达24.7%。
[Abstract]:AZO thin films were deposited on glass substrates by DC RF coupled magnetron sputtering technique, and AZO thin films were deposited on glass substrates with aluminum doped AZO _ 2Al _ 2O _ 3 ceramic target as the target, and HCl solution with mass fraction of 0.5% was used to etch the AZO thin films on the suede. The crystal structure and surface morphology of AZO thin films prepared by DC RF coupled magnetron sputtering under working pressure were studied by means of XRDX SEM, spectrophotometer, Hall effect test system and optoelectronic haze meter. The results show that AZO thin films with excellent properties can be prepared by DC RF coupled magnetron sputtering at low temperature. With the decrease of working pressure, the density increases and the optoelectronic properties are improved. At the working pressure of 0.5 Pa, the resistivity of AZO films prepared at low temperature is 3.55 脳 10 ~ (-4) 惟路cm, the visible light transmittance is 88.36, the resistivity is 4.19 脳 10 ~ (-4) 惟路cm, the transmittance of visible light is 89.59, and the fog degree is 24.7B.
【作者单位】：浮法玻璃新技术国家重点实验室;蚌埠玻璃工业设计研究院;
【基金】：中国建筑材料集团有限公司集团经费(K12364)
【分类号】：TB383.2

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