真空单靶磁控溅射法制备铜铟镓硒薄膜

发布时间：2018-03-20 01:31

本文选题：CIGS薄膜　切入点：单靶磁控溅射　出处：《大连交通大学》2015年硕士论文　论文类型：学位论文

【摘要】：Cu(In,Ga)Se2(CIGS)薄膜太阳电池以其高效、低成本、抗辐射能力强、寿命长等优良特性引起了人们日益广泛的关注。在薄膜制备方法中,磁控溅射技术是一种被普遍采用的方法,因此,本文采用单靶直流脉冲磁控溅射技术制备CIGS薄膜,系统地研究沉积过程中的相关制备参数对CIGS薄膜性能的影响情况。本文在制备CIGS薄膜的过程中,主要研究电源参数,如溅射功率、溅射频率,以及基底温度等对薄膜物相结构、择优取向状态、成份、电学性能等的影响规律与机制。关于电源参数(即溅射功率和溅射频率)对CIGS薄膜状态及性能影响的研究表明,沉积速率(对应沉积电流)会严重影响薄膜的择优取向状态,当沉积速率大于22.5 nm/min时,所制备的CIGS薄膜具有(220)/(204)择优取向。此外,沉积速率及沉积电压均对薄膜的成份及电学性能具有重要影响。结果表明,即使未对基底加热,薄膜均具有单一的黄铜矿结构,所有沉积的CIGS薄膜的成份含量均偏离于靶材的成份含量;沉积速率对于Se元素和Ga的含量影响较小,但随沉积速率增加,In元素含量明显增加、而Cu元素含量明显降低;当溅射电压降低时,薄膜中Se元素和Ga元素含量明显增加,但In元素含量降低。基于单一元素溅射产额的半经验公式,对薄膜中各元素含量随溅射电压的变化进行了模拟估算,且模拟结果基本与实验结果相符合。鉴于模拟结果推测,影响薄膜中各元素含量的主要因素是各组元的本征属性,如表面束缚能(或升华能)、原子序数、原子质量等。关于电学性能的研究表明,当薄膜为贫Cu或接近化学计量比时,薄膜的载流子浓度较低,具有较高的电阻率。在磁控溅射制备CIGS薄膜的过程中,CIGS的晶化状态对其性能也起着至关重要的作用。本论文设计了一种新颖的基底加热方式,进一步研究了不同的基底温度对CIGS薄膜性能的影响。结果表明,在基底温度不超过400oC时,样品的物相结构为单一的黄铜矿结构。尤其是基底温度为400oC时,获得了具有较大晶粒、较为致密的CIGS薄膜。当基底温度为450oC时,薄膜形貌较为疏松。研究还表明,当基底温度在室温至400oC范围内,薄膜中的成份基本没有变化。此外,当未施加基底温度时,薄膜中择优取向为(220)/(204);当基底温度大于100oC时,薄膜中的择优取向转变为(112)。
[Abstract]:Due to its high efficiency, low cost, strong radiation resistance and long lifetime, the thin film solar cells have attracted more and more attention. Magnetron sputtering is a widely used method in the preparation of thin films. In this paper, CIGS thin films were prepared by single target DC pulse magnetron sputtering. The influence of deposition parameters on the properties of CIGS thin films was systematically studied. In the process of preparing CIGS films, the power supply parameters were studied. Such as sputtering power, sputtering frequency, substrate temperature, etc., on the phase structure, preferred orientation state, composition of the film, The effects of power supply parameters (i.e. sputtering power and sputtering frequency) on the state and properties of CIGS films are studied. It is shown that the deposition rate (corresponding to deposition current) will seriously affect the preferred orientation state of CIGS films. When the deposition rate is greater than 22.5 nm/min, the prepared CIGS thin films have a preferred orientation of 220U / L / 204.Furthermore, the deposition rate and voltage have an important effect on the composition and electrical properties of the films. The results show that the substrate is not heated even if the substrate is not heated. All the films have a single chalcopyrite structure, and the composition content of all deposited CIGS films deviates from the content of target, and the deposition rate has little effect on se and Ga content, but increases obviously with the increase of deposition rate. When the sputtering voltage decreases, the content of se and Ga increases obviously, but the content of in decreases. Based on the semi-empirical formula of sputtering yield of single element, The variation of element content with sputtering voltage is simulated and estimated, and the simulation results are in good agreement with the experimental results. According to the simulation results, the main factor affecting the content of each element in the film is the intrinsic properties of each component. For example, surface binding energy (or sublimation energy, atomic number, atomic mass, etc.). Studies on electrical properties show that when the film is Cu poor or near stoichiometric ratio, the carrier concentration of the film is lower. The crystallization state of CIGS films also plays an important role in the preparation of CIGS films by magnetron sputtering. In this paper, a novel substrate heating method is designed. The effects of different substrate temperatures on the properties of CIGS thin films were further studied. The results show that the phase structure of the samples is a single chalcopyrite structure when the substrate temperature is less than 400oC. especially when the substrate temperature is 400oC, large grains are obtained. When the substrate temperature is 450 OC, the morphology of CIGS thin film is looser. The results also show that the composition of the film is almost unchanged when the substrate temperature is from room temperature to 400oC. In addition, when the substrate temperature is not applied, The preferred orientation in the thin film is 220U / L 204N, and when the substrate temperature is higher than 100oC, the preferred orientation in the film changes to 112g.
【学位授予单位】：大连交通大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

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