热压烧结靶材制备氧化铟锌薄膜晶体管

发布时间：2018-04-01 22:17

  本文选题：薄膜晶体管　切入点：氧化铟锌　出处：《物理化学学报》2017年10期

【摘要】：本文研究了热压烧结条件对氧化铟锌(IZO)靶材和薄膜晶体管(TFT)性能的影响。以80%:20%(质量分数比)的ZnO和In_2O_3的混合粉体为原料通过热压烧结法制备IZO靶材,以制备的靶材通过磁控溅射制备IZO TFT。X射线衍射(XRD)图谱以及扫描电镜(SEM)图像表明IZO靶材结晶性好,元素分布均匀。烧结温度为850℃时靶材呈现烧结致密化,900℃-60 min条件下In_2O_3的挥发破坏了靶材烧结致密化。提高烧结温度或延长烧结时间加速In向ZnO晶格的扩散以及空位向表面迁移,有利于靶材致密化以及形成InZnO_x晶相。TFT器件表征结果表明低密度和过高密度靶材会恶化薄膜质量,降低器件性能,可见适当高密度的靶材对制备TFT至关重要,最终900℃-90 min条件的靶材所制备的TFT性能最好,迁移率为16.25 cm~2·V~(-1)·s~(-1)。
[Abstract]:The effects of hot pressing sintering conditions on the properties of indium zinc oxide IZO targets and thin film transistors (TFTs) have been studied.IZO targets were prepared by hot-pressing sintering from the mixed powder of ZnO and In_2O_3 (mass fraction ratio) of 80: 20. IZO TFT.X X-ray diffraction (IZO) spectra and SEM images of the prepared targets were prepared by magnetron sputtering. The results showed that IZO targets had good crystallinity.The elements are evenly distributed.At the sintering temperature of 850 鈩，

本文编号：1697541