合成硫化铜影响因素的研究进展

发布时间：2018-04-17 05:40

本文选题：纳米结构半导体 + 硫化铜　；参考：《硅酸盐通报》2017年01期

【摘要】：由于纳米结构半导体硫化铜具有独特的物化性质,使其在光电材料方面得到广泛应用。本文根据国内外的最新研究进展介绍了水热法和溶剂热法制备硫化铜各种形貌的影响因素:反应物质、溶剂、反应温度、反应时间。同时介绍了不同形貌的带隙能及降解有机污染物的研究情况。还介绍了其复合材料在光降解有机物的研究进展。最后对硫化铜纳米晶体材料的能带值的可能影响因素及应用前景做了展望,以期对该领域的研究有一定的帮助。
[Abstract]:Due to its unique physical and chemical properties, nanostructured semiconductor copper sulfide has been widely used in optoelectronic materials.According to the latest research progress at home and abroad, the factors influencing the morphology of copper sulphide prepared by hydrothermal method and solvothermal method are introduced in this paper: reactants, solvents, reaction temperature, reaction time.At the same time, the study of band gap energy and degradation of organic pollutants with different morphologies were introduced.The research progress in photodegradation of organic compounds was also introduced.Finally, the possible factors affecting the energy band value of copper sulfide nanocrystalline material and the prospect of its application are prospected, in order to be helpful to the research in this field.
【作者单位】：云南省环境科学研究院;
【分类号】：TN304.2;TB383.1

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