磁控溅射制备ZnS基透明导电薄膜及其光电性能研究

发布时间：2018-04-17 14:55

  本文选题：ZnS基透明导电薄膜 + 磁控溅射　； 参考：《南京航空航天大学》2015年硕士论文

【摘要】：具有低电阻率及高透光率的Zn S基透明导电薄膜,在液晶显示器,太阳能电池和有机发光器件等领域具有广阔的应用前景。针对目前市场上应用的透明导电薄膜成本高和光电性能低的问题,本论文以Zn S基透明导电薄膜为研究对象,以制备具备宽波长范围透明、高光透过率和低电阻的高综合性能新型透明导电薄膜为目标,采用磁控溅射仪交替溅射制备Zn S/Cu多层复合薄膜和共溅射制备Cu掺杂Zn S薄膜(Zn S:Cu),利用XRD、AFM、SEM、UV-Vis和四探针仪等多种现代分析测试手段,研究Zn S层厚度、Cu层厚度和层数对Zn S/Cu多层复合薄膜微观结构及光电性能影响,进一步研究退火温度对Zn S/Cu三层、五层以及Zn S:Cu薄膜结晶性能、表面组织形貌以及光电学性能影响。薄膜微观结构、电子浓度和各层厚度引起的光干涉效应共同影响Zn S/Cu多层复合薄膜的综合性能。中间层Cu薄膜按岛状方式生长,当Cu层为16nm和Zn S层均为42nm时,Zn S/Cu/Zn S复合薄膜在可见光波段的最高透光率达87%,方块电阻为62.5?/sq,品质因子最大为3.76×10-3?-1。增加薄膜沉积层数至五层时,薄膜的透射峰向长波移动,近红外波段最高透过率为88%,方块电阻降低至56.4?/sq,品质因子为4.48×10-3?-1。退火处理能够改善Zn S/Cu多层复合薄膜的结晶性能,提高薄膜的光透过率并降低其电阻。在200℃退火温度下,薄膜开始结晶,表面出现大颗粒团簇。在100℃退火温度下,复合薄膜的综合性能最高分别为:Zn S/Cu/Zn S三层薄膜在可见光波段的最高光透过率上升至90%且1100nm处透光率仍高达73%,方块电阻下降至46.3?/sq;Zn S/Cu/Zn S/Cu/Zn S五层薄膜的透射峰向短波移动,可见光波段最高的光透过率上升至89%且1100nm处透光率为72%,方块电阻下降至40.4?/sq。Zn S:Cu薄膜进行退火处理,薄膜在Zn S(111)择优取向。继续增加退火温度,Cu占住Zn位形成P型半导体Cu2S,Cu2S晶粒不断长大并伴有Cu S晶粒形成,薄膜表面形貌由颗粒状向片状转变。随退火温度升高,Zn S:Cu薄膜的光学带隙逐渐减小,光透过率先升高后降低,方块电阻先减小后增大。在200℃温度下,Zn S:Cu薄膜的方块电阻最低为164.1?/sq,光透过率为80%,300nm-600nm波段光透过率优于Zn S/Cu多层复合薄膜,品质因子最大为6.1×10-4?-1。
[Abstract]:ZnS thin films with low resistivity and high transmittance are widely used in liquid crystal displays, solar cells and organic light-emitting devices.Aiming at the problems of high cost and low optoelectronic properties of transparent conductive thin films used in the market at present, this paper takes ZnS based transparent conductive thin films as the research object, in order to prepare transparent films with wide wavelength range.New transparent conductive thin films with high light transmittance and low resistance.Zn S/Cu multilayer composite films and Cu doped ZnS thin films were prepared by alternately sputtering with magnetron sputtering instrument.The effects of Zn S layer thickness and Cu layer thickness and number of layers on the microstructure and optoelectronic properties of Zn S/Cu multilayer composite films were studied. The crystallization properties of Zn S/Cu three layers, five layers and Zn S:Cu films were further studied by annealing temperature.The effect of surface morphology and optoelectronic properties.The composite properties of Zn S/Cu multilayer composite films are affected by the optical interference effect caused by the microstructure, electron concentration and the thickness of each layer.The interlayer Cu thin films are grown in island mode. When Cu layer is 16nm and ZnS layer is 42nm, the maximum transmittance of Zn S/Cu/Zn S composite film is 87 in visible light band, the square resistance is 62.5 / sqand, and the maximum quality factor is 3.76 脳 10 ~ (-3) ~ (-1) ~ (-1).When the deposition layer is increased to five layers, the transmission peak of the film moves to long wave, the highest transmittance in near infrared band is 88, the square resistance is reduced to 56.4 / sqand the quality factor is 4.48 脳 10 ~ (-3) 渭 m ~ (-1).Annealing treatment can improve the crystalline properties of Zn S/Cu multilayer composite films, increase the optical transmittance and decrease the resistance of the films.At the annealing temperature of 200 鈩，

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