基于ZnO-CuO纳米线结构的新型光电器件

发布时间：2018-04-18 10:29

本文选题：原子沉积法 + 水浴法　；参考：《光电子·激光》2016年02期

【摘要】：为了获得高效的整流器件和微型短波长的发光器件,采用原子层沉积(ALD)法和水浴法合成了具有ZnO-CuO的结构器件。对制备的样品进行了光学和电学特性的检测,获得了22.79的整流比和17.69的理想因子,且门限电压和整流比等特性随CuO厚度增加而减小。在光致发光(PL)特性上,具有显著的由ZnO带电激发的385nm紫外光波峰,同时伴有由深能级散射激发的572nm的可见光波峰,且随着CuO厚度的增加紫外光波峰减小,可见光峰变大。实验结果表明,本文制备的器件可以应用在纳米型二极管、光电探测器以及微型光源等领域。
[Abstract]:In order to obtain high efficiency rectifier and miniature short wavelength luminescent devices, the structure devices with ZnO-CuO were synthesized by atomic layer deposition (ALD) method and water bath method.The optical and electrical properties of the prepared samples were tested. The rectifier ratio of 22.79 and the ideal factor of 17.69 were obtained, and the threshold voltage and rectifier ratio decreased with the increase of CuO thickness.In the photoluminescence photoluminescence (PL), there are obvious ultraviolet peaks of 385nm excited by ZnO charged, and visible peaks of 572nm excited by deep level scattering. The visible peaks increase with the increase of the thickness of CuO.The experimental results show that the devices can be used in nanodiodes, photodetectors and micro light sources.
【作者单位】：上海理工大学教育部光学仪器与系统工程研究中心上海市现代光学系统重点实验室;
【基金】：国家重点基础研究发展计划(2015CB352001) 国家自然科学基金(61205094) 上海市重点学科建设(S30502) 校培育计划(13XGM11)资助项目
【分类号】：TB383.1

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