新型等离子束源CVD制备a-Si:H薄膜特性的研究

发布时间：2018-04-20 13:18

  本文选题：等离子束源 + 氢化非晶硅　； 参考：《压电与声光》2017年05期

【摘要】：采用等离子束源化学气相沉积(CVD)设备制备氢化非晶硅薄膜。使用台阶仪、UV-Vis-NIR分光光度计、X线衍射仪(XRD)及扫描电子显微镜(SEM)等手段表征样品。分析了该设备沉积的薄膜均匀度,并比较了本设备与普通电子束蒸发设备制备的薄膜表面形貌。实验结果表明,当设备功率为300 W,硅烷/氢气流量比为15∶10,设备腔室气压为7×10-5 MPa,上、下线圈电流比为6∶2时,薄膜沉积速率最大。
[Abstract]:Hydrogenated amorphous silicon thin films were prepared by iso-ion beam chemical vapor deposition (CVD) equipment. The samples were characterized by means of step spectrometer UV-Vis-NIR spectrophotometer X-ray diffractometer (XRD) and scanning electron microscope (SEM). The uniformity of the films deposited by this equipment was analyzed, and the surface morphology of the films prepared by this equipment was compared with that prepared by the conventional electron beam evaporation equipment. The experimental results show that when the power of the equipment is 300 W, the flow ratio of silane to hydrogen is 15: 10, the pressure of the chamber is 7 脳 10 ~ (-5) MPa, and the current ratio of the upper and lower coils is 6:2, the deposition rate of the film is the highest.
【作者单位】： 上海交通大学电子信息与电气工程学院;
【基金】：国家自然科学基金资助项目(61310306053)
【分类号】：TB383.2
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本文编号：1777918