胶体金属砷、磷化物纳米晶的制备及性质研究

发布时间：2018-04-22 16:24

本文选题：纳米团簇 + 砷化镉　；参考：《吉林大学》2015年博士论文

【摘要】：本论文主要涉及几种胶体金属砷、磷化物纳米晶的制备和性质研究，建立了制备几种典型II-V族和III-V族半导体纳米簇的方法，并以其为反应前体实现了金属砷、磷化物纳米晶的可控制备，并对制备材料的光学、电学性质进行了表征。 1.将由砷、磷化物与无机酸反应生成的H3As、H3P气体作为反应物，制备了砷化镉和磷化镉的纳米簇。深入研究了该制备体系的反应机制，了解了纳米簇制备的必要条件。并在低温条件下，对砷化镉和磷化镉的纳米簇进行了ZnS壳材料的包覆，提高了材料的荧光效率和稳定性。 2.以砷化镉纳米簇作为反应前体，成功制备了尺寸和形貌可控的Cd3As2纳米粒子。深入的研究了该体系纳米晶的生长过程，揭示了热力学调控纳米晶尺寸这一规律。设计构筑以Cd3As2纳米粒子为吸光材料的量子点太阳能薄膜电池器件，其光电转化效率达到3.75%，表明Cd3As2纳米晶可以作为光吸收材料应用于光伏器件领域。 3.以纳米簇作为反应前体，设计制备了尺寸可调的磷化镉和III-V族的InP、InAs纳米粒子，制备的Cd3P2、InP、InAs量子点尺寸可控并具有宽泛的光谱可调范围，并对InP、InAs量子点进行了无机壳材料的惰性包覆，既提高了材料的发光效率又提高了稳定性。为金属砷、磷化物纳米晶的制备提供了一种具有普适性的新方法。 4.以新制的H3P气体为磷源，用于气、液两相的胶体法合成。成功的制备了MoP和Ni2P不同尺寸的纳米粒子，并将制备的MoP和Ni2P制备成工作电极，用于电催化制氢的测试，测试效果十分显著.以H3As气体为砷源，设计合成了多元金属砷化物半导体纳米材料Cu3CdSnAs3，探究了该体系中粒子的生长过程和生长方式。将制备的金属砷化物多元半导体材料Cu3CdSnAs3作为吸光材料，构筑成量子点薄膜太阳能电池器件，实验结果表明，以3:1:1组分的材料构筑的器件光电转换效率可达到3.38%，，该多元材料可以成为光伏器件结构中有潜力的光吸收材料。
[Abstract]:In this paper, the preparation and properties of several colloidal metallic arsenic and phosphate nanocrystals were studied. The methods of preparing several typical II-V and III-V semiconductor nanocrystals were established, and the metal arsenic was realized by using them as reaction precursors. The controlled preparation of phosphate nanocrystals and the characterization of the optical and electrical properties of the prepared materials were carried out. 1. The nanoclusters of cadmium arsenide and cadmium phosphide were prepared by using H _ 3As-H _ 3P gas, which was formed by the reaction of arsenic, phosphate and inorganic acid. The reaction mechanism of the preparation system was studied, and the necessary conditions for the preparation of nanoclusters were understood. The ZnS shell materials were coated with cadmium arsenide and cadmium phosphide nanoclusters at low temperature to improve the fluorescence efficiency and stability of the materials. 2. Cd3As2 nanoparticles with controllable size and morphology were successfully prepared by using cadmium arsenide nanoclusters as the precursor of the reaction. The growth process of nanocrystalline in this system was studied, and the thermodynamics regulation of nanocrystalline size was revealed. Quantum dot solar thin film cell devices with Cd3As2 nanoparticles as absorbent materials are designed and constructed. The photoelectric conversion efficiency of Cd3As2 nanocrystals is 3.75, which indicates that Cd3As2 nanocrystals can be used as photoabsorption materials in photovoltaic devices. 3. Using nanoclusters as the precursor of the reaction, cadmium phosphide nanoparticles with adjustable size and III-V family InP- InAs nanoparticles were designed and prepared. The size of the Cd3P2InP- InP- InAs quantum dots is controllable and has a wide spectrum adjustable range. The inert coating of InP- InAs quantum dots not only improves the luminescence efficiency but also improves the stability. It provides a new universal method for the preparation of arsenic and phosphate nanocrystals. 4. The newly prepared H 3P gas was used as phosphorus source for the colloidal synthesis of gas and liquid phases. MoP and Ni2P nanoparticles of different sizes were successfully prepared, and the MoP and Ni2P were prepared as working electrodes, which were used for the measurement of hydrogen production by electrocatalysis. Cu3CdSnAs3, a polymetallic arsenide semiconductor nanomaterial, was designed and synthesized by using H3As gas as arsenic source. The growth process and growth mode of particles in the system were investigated. Using the metal arsenide multicomponent semiconductor material Cu3CdSnAs3 as the absorbent material, the quantum dot thin film solar cell device is fabricated. The experimental results show that, The optoelectronic conversion efficiency of the device constructed with the material of 3:1:1 component can reach 3.38. The multicomponent material can be used as the potential photoabsorption material in the photovoltaic device structure.
【学位授予单位】：吉林大学
【学位级别】：博士
【学位授予年份】：2015
【分类号】：TB383.1

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