Fe-Ga薄膜的微结构与磁性能研究

发布时间：2018-04-27 07:13

本文选题：Fe-Ga薄膜 + 磁控溅射　；参考：《稀有金属材料与工程》2017年02期

【摘要】：采用磁控溅射方法,以Si(1OO)为衬底在40~80 W功率下制备了Fe_(83)Ga_(17)薄膜,通过XRD、SEM、室温磁滞回线以及MFM的测量研究了不同溅射功率制备的Fe-Ga薄膜的结构、形貌、磁性能和磁畴。XRD结果表明室温下薄膜样品是bcc(11O)晶体结构。SEM观察结果表明薄膜颗粒尺寸在40~70 nm且随着功率增大,薄膜颗粒的尺寸变大,薄膜厚度增加。室温磁滞回线的测量结果表明一定范围内随着功率增大,样品的矫顽力H_c总体呈上升趋势,饱和磁化强度M_s的变化规律并不明显,剩余磁化强度M和矩形比Mr/Ms呈缓慢下降的趋势。磁畴的观察结果表明样品的磁畴为迷宫畴结构,且随着功率增大,磁畴的尺寸增大。
[Abstract]:FeS-1 OO) thin films were prepared by magnetron sputtering at 4080W power. The structure and morphology of Fe-Ga thin films with different sputtering power were investigated by XRDX SEM, hysteresis loop at room temperature and MFM measurements. The results of magnetic properties and magnetic domain. XRD show that the film sample is bcc11o crystal structure at room temperature. The results of SEM show that the particle size of the thin film increases at 40 ~ 70 nm and with the increase of power, the particle size of the film increases and the thickness of the film increases. The measurement results of the hysteresis loop at room temperature show that the coercivity H _ (C) of the sample increases with the increase of power in a certain range, but the variation of saturation magnetization M _ s is not obvious. The residual magnetization M and rectangle decreased slowly compared with Mr/Ms. The results show that the magnetic domain of the sample is labyrinth structure and the size of the magnetic domain increases with the increase of power.
【作者单位】：浙江理工大学;台州学院;
【基金】：浙江省自然科学基金(Y4100618)
【分类号】：TB383.2

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