一维金属氧化物特殊纳米结构的制备及其器件研究

发布时间：2018-05-08 14:12

本文选题：纳米环 + 纳米螺旋　；参考：《华中科技大学》2015年博士论文

【摘要】：一维纳米结构具有表面效应,量子尺寸限域效应和宏观量子隧道效应等特点,表现出独特的光学、电学、化学、热学和磁学等的性质。并且,一维纳米结构也有众多新颖的效应被逐步发现并研究,例如光开关效应、纳米线栅偏振效应、场发射效应、热电效应、压电效应、储氢特性和敏感特性等。随着研究深入,对一维纳米结构的形貌尺寸控制和成分组成控制的方法越来越先进,特殊结构也带来相应的特殊功能。这种有针对性的可控合成和操纵,不再将研究纳米技术之初新颖有趣的外观作为动力,越来越注重精细的、可量化的和可操控的研究,以应对更苛刻和独特的器件要求。本论文对常规化学气相沉积法进行简单改造,制备多种金属氧化物特殊结构的纳米线,对其光致发光性质、润湿性和有限元仿真等进行研究,制备了新颖和高性能的电子和光电子器件。主要涵盖的工作有：在高温水平管式炉中进行反应,以低熔点的金属Bi作为辅助,制备大量的Ga2O3纳米环。当升温过程为两步升温法时得到单层纳米环；当升温过程为快速升温法时得到双层纳米环。这种方法还被扩展用于合成SnO2和In2O3纳米环。研究了Ga2O3纳米环的光致发光特性,得到572nm的发光峰。最后制备了纳米环晶体管器件,进行简单的电学性质测试。由于这种结构的结晶性并不好,栅极调控很不理想,阈值电压较大为84V。使用激光烧蚀化学气相沉积法,在大水平石英管内放置一段小石英管。当小石英管为单端封闭时,得到In2O3纳米螺旋结构；当小石英管两端均开放时,得到In2O3多重弯折纳米线。这种特殊结构接触角达到132.7°在紫外光照射一定时间后,变为超亲水性。黑暗中处理一定时间又转变为疏水性。基于这两种特殊结构的晶体管为n型导电特性。多重弯折结构和螺旋结构的电子迁移率分别为243cm2/(V-s)和207cm2/(V·s)。使用激光烧蚀化学气相沉积法,得到In2O3的多级结构,在较粗的纳米线主干上有大量较细的纳米线分支。接触角高达143.7°，也表现出光致超亲水性和可逆转变的特点。利用这种宽带隙材料在ITO基底上制备了透明薄膜晶体管,光学透明度高达80%,具有良好的栅极电压控制性和电传输性能。使用常见的化学气相沉积法,得到两种不同类型的In2O3梯子状纳米线,叶脉状和普通梯子状,类似的成功地制备SnO2、ZnO和Ga2O3梯状纳米线。为便于研究,在Si/SiO2基底上制备SnO2器件。晶体管为耗尽型,且载流子浓度高出四个数量级。有平面简谐波入射这种结构中既有F-P干涉模式,又有回音廊干涉模式,增强了对于深紫外光的吸收效率,带来更高的光电转换率。
[Abstract]:One-dimensional nanostructures exhibit unique optical, electrical, chemical, thermal and magnetic properties due to their surface effects, quantum size limiting effects and macroscopic quantum tunneling effects. Moreover, many novel effects have been gradually discovered and studied in one-dimensional nanostructures, such as optical switch effect, nanowire polarization effect, field emission effect, thermoelectric effect, piezoelectric effect, hydrogen storage characteristics and sensitivity. With the development of research, the methods of controlling the morphology and composition of one-dimensional nanostructures have become more and more advanced, and the special structures have brought about the corresponding special functions. This kind of targeted controllable synthesis and manipulation no longer uses the original and interesting appearance of nanotechnology as the motive force, and pays more and more attention to the fine, quantifiable and controllable research to meet the more demanding and unique device requirements. In this paper, the conventional chemical vapor deposition method is simply modified to prepare many kinds of metal oxide nanowires with special structure. The photoluminescence properties, wettability and finite element simulation of nanowires are studied. Novel and high performance electronic and optoelectronic devices were fabricated. The main areas of work covered are: A large number of Ga2O3 nanocycles were prepared in a high temperature horizontal tube furnace assisted by low melting point metal Bi. Monolayer nanorings were obtained when the heating process was two-step heating and double-layer nanorings were obtained when the heating process was rapid. The method has also been extended to synthesize SnO2 and In2O3 nanospheres. The photoluminescence characteristics of Ga2O3 nanorings were studied and the luminescence peaks of 572nm were obtained. Finally, nano-ring transistor devices are fabricated and simple electrical properties are tested. Because of the poor crystallinity of this structure, the gate regulation is not ideal, and the threshold voltage is 84 V. A small quartz tube was deposited in a large level quartz tube by laser ablation chemical vapor deposition. When the small quartz tube is closed at one end, the In2O3 nanowire structure is obtained, and when both ends of the small quartz tube are open, the In2O3 multiple bending nanowires are obtained. The contact angle of this special structure reaches 132.7 掳and becomes super hydrophilic after UV irradiation for a certain time. In the dark process a certain amount of time and then change to hydrophobicity. The transistors based on these two special structures are n-type conductive. The electron mobility of the multifold bending structure and the spiral structure are 243 cm ~ 2 / m ~ (2) V ~ (s) and 207cm2/(V ~ (s1), respectively. The multistage structure of In2O3 was obtained by laser ablative chemical vapor deposition, and a large number of fine nanowires branched on the thicker nanowires. The contact angle is as high as 143.7 掳, which also shows the characteristics of photoinduced superhydrophilicity and reversible transformation. Transparent thin film transistors have been fabricated on ITO substrate using this wide band gap material. The optical transparency is as high as 80 and has good gate voltage control and electrical transmission performance. Two different types of In2O3 ladder nanowires, leaf vein and ordinary ladder, were obtained by chemical vapor deposition. Sno _ 2ZnO and Ga2O3 ladder nanowires were prepared successfully. To facilitate the research, SnO2 devices were fabricated on Si/SiO2 substrate. The transistor is depleted and the carrier concentration is four orders of magnitude higher. There are both F-P interference mode and echo gallery interference mode in the planar harmonic incident structure, which enhance the absorption efficiency of deep ultraviolet light and bring higher photoelectric conversion rate.
【学位授予单位】：华中科技大学
【学位级别】：博士
【学位授予年份】：2015
【分类号】：TB383.1

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