直径对一维ZnO纳米结构的发光性质的影响

发布时间：2018-05-21 16:19

本文选题：ZnO + 光致发光　；参考：《哈尔滨师范大学》2015年硕士论文

【摘要】：近年来,为了研制光电纳米器件,科学家对半导体纳米结构的合成、发光性质的研究、发现新材料以及在探索纳米科学中出现的物理问题非常感兴趣。ZnO作为一种非常重要的半导体化合物材料,由于其在室温下具有较大的禁带宽度(3.37 eV)和较高的激子束缚能(60 meV),一直是发光材料领域研究的热点,且ZnO在紫外激光器和光发射二极管中具有重要的应用前景;此外,一维ZnO纳米结构已经被认为是研究基础物理现象和应用物理问题的一种重要材料。所以,研究一维ZnO纳米材料光学性质不仅具有科学意义,而且具有重要的应用价值。本文利用化学气相沉积的方法合成了直径调制的ZnO纳米线,即锥形纳米线。利用扫描电子显微镜、X射线电子衍射、和显微拉曼光谱仪对合成的样品形貌、结构和光学性质进行了表征,并着重地探讨了单根锥形ZnO纳米线上不同位置处的发光性质。通过对单根ZnO纳米线光致发光光谱的测试,发现直径大小不同则其近带边的发光峰位也不同。而利用空间分辨的光致发光成像技术得到的二维光致发光图像,进一步显示了纳米线上每个位置的综合光发射特性。并且我们可以更直观地观察到随着单根ZnO纳米线直径的减小其紫外发射峰发生了蓝移。此外,样品的二维光致发光强度分布图像表明整个纳米线发光强度的分布不均匀性。我们基于光致发光成像技术,莫斯—布尔斯坦效应和半导体理论对光谱的蓝移现象和强度分布给出了合理的理论解释。
[Abstract]:In recent years, in order to develop optoelectronic nanodevices, scientists have studied the synthesis and luminescence properties of semiconductor nanostructures. The discovery of new materials and the physical problems that have emerged in the exploration of nanosciences are very interesting. ZnO is a very important semiconductor compound material. Because of its wide band gap of 3.37eV) and high exciton binding energy of 60meV at room temperature, it has been a hot spot in the field of luminescent materials, and ZnO has an important application prospect in ultraviolet lasers and photoemission diodes. One-dimensional ZnO nanostructures have been considered as an important material for studying basic physical phenomena and applied physical problems. Therefore, the study of optical properties of one-dimensional ZnO nanomaterials not only has scientific significance, but also has important application value. The diameter-modulated ZnO nanowires, i.e. conical nanowires, have been synthesized by chemical vapor deposition. The morphology, structure and optical properties of the synthesized ZnO nanowires were characterized by scanning electron microscopy (SEM), X-ray electron diffraction (SEM) and micro-Raman spectrometer. The luminescence properties at different positions on the single conical ZnO nanowires were emphatically discussed. The photoluminescence spectra of a single ZnO nanowire are measured. It is found that the near band edge peak positions are different with different diameters. The two-dimensional photoluminescence images obtained by the spatially resolved photoluminescence imaging technique further show the integrated photoluminescence characteristics of each position on the nanowires. Furthermore, the blue shift of the UV emission peak with the decrease of the diameter of single ZnO nanowires can be observed more intuitively. In addition, the two-dimensional photoluminescence intensity distribution image of the sample shows that the distribution of the luminescence intensity of the whole nanowire is not uniform. Based on the photoluminescence imaging technology, the Moss-Burstein effect and the semiconductor theory, we give a reasonable theoretical explanation of the blue shift phenomenon and intensity distribution of the spectrum.
【学位授予单位】：哈尔滨师范大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1

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