阳极氧化法制备4H-SiC纳米阵列与结构调控及其光电特性

发布时间：2018-06-05 08:18

本文选题：阳极氧化 + SiC　；参考：《太原理工大学》2016年硕士论文

【摘要】：SiC是典型的第三代半导体材料,具有宽禁带、高热导率、高电子饱和漂移速率、高临界击穿场强、以及良好的化学稳定性等优异特性,在研发高频、高温、高压、抗辐照以及大功率等苛刻服役条件下的光电器件,具有显著优势。SiC低维纳米结构,不仅拥有其传统体材料的本征物理特性,还兼具纳米材料的独特优势,在研发新颖高效的半导体器件,展现出良好的应用前景。SiC纳米阵列结构制备,是其器件化应用的重要基础之一。然而当前已有的制备方法,绝大部分需要在高温高压等条件下进行,导致了其材料制备难于调控且重复较差等问题。因此,探索在室温常压下实现SiC纳米阵列结构的温和制备,具有良好的现实意义和发展前景。本论文采用阳极氧化法,室温和常压环境下,实现SiC纳米阵列结构的制备,通过对阳极氧化工艺的探索和优化,实现了高定向的结构可调的SiC纳米阵列结构的制备,对其场发射和光电催化性能进行了检测和分析,展现出了SiC纳米阵列结构在场发射阴极材料和光电催化剂良好的应用前景。结合本论文验工作,所获得主要研究成果如下:(1)以氢氟酸、乙醇以及过氧化氢为阳极氧化溶液,4H-SiC单晶为原料,通过阳极氧化法,实现了高定向SiC纳米阵列结构在室温和常压环境下的温和制备。(2)通过对阳极氧化工艺比如刻蚀时间的调控等,实现了SiC纳米结构的调控;(3)场发射特性检测结果表明,所制备的SiC纳米阵列结构具有较低的开启电场和稳定的电子发射,拥有良好的综合场发射性能。(4)对所制备的SiC纳米阵列结构的光电催化性能进行了初步探索,研究结果表明,SiC纳米阵列结构的形貌对其光电催化性能影响显著。
[Abstract]:SiC is a typical third-generation semiconductor material with wide band gap, high thermal conductivity, high electron saturation drift rate, high critical breakdown field strength and good chemical stability. The optoelectronic devices under harsh service conditions such as radiation resistance and high power have significant advantages. Sic low dimensional nanostructures not only possess the intrinsic physical properties of traditional bulk materials, but also have the unique advantages of nanomaterials. It is one of the important bases for the development of novel and efficient semiconductor devices that the fabrication of nanoarrays of sic nanostructures has a good prospect. However, most of the existing preparation methods need to be carried out under the conditions of high temperature and high pressure, which leads to the problems of difficult to control and poor repetition of the preparation of the materials. Therefore, it is of great practical significance and prospect to explore the mild preparation of SiC nanoarrays at room temperature and atmospheric pressure. In this paper, anodic oxidation method is used to fabricate SiC nanoarrays at room temperature and atmospheric pressure. Through the exploration and optimization of anodic oxidation process, the highly oriented and adjustable SiC nanoarrays are fabricated. The field emission and photocatalytic properties of SiC nanoscale structure emission cathode materials and photocatalysts were tested and analyzed. The main research results are as follows: (1) using hydrofluoric acid, ethanol and hydrogen peroxide as raw materials of anodic oxidation solution, 4H-SiC single crystal was anodized by anodizing method. In this paper, we have realized the mild preparation of high orientation SiC nanoarrays at room temperature and atmospheric pressure. By controlling the anodic oxidation process such as etching time, the field emission characteristics of SiC nanostructures have been measured. The prepared SiC nanoarrays have low open electric field and stable electron emission, and have good comprehensive field emission properties. The photocatalytic properties of the prepared SiC nanoarrays have been preliminarily explored. The results show that the morphology of sic nanoarrays has a significant effect on its photocatalytic performance.
【学位授予单位】：太原理工大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TB383.1

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