AlNi纳米合金薄膜低温电阻率的特性研究

发布时间：2018-06-05 15:05

本文选题：Al-xNix合金薄膜 + 半导体电阻率　；参考：《原子能科学技术》2017年10期

【摘要】：通过磁控溅射制备了AlNi纳米合金薄膜,并利用自制的直排四探针低温测量系统测量了薄膜电阻率随温度(8~300K)的变化规律。结果表明:由于电子-声子和电子-磁子相互作用,纯Al和Ni纳米晶薄膜的电阻率分别呈现出正的电阻率温度系数,且电子-磁子散射对电阻率的贡献主要体现在高温区(80~300K),在低温区(40K)电子-晶界/表面散射对电阻率的贡献占主导地位。Ni原子掺入量的增加,诱导了纳米晶薄膜无序程度的增强,从而使Al1-xNix纳米合金薄膜逐渐由晶体的金属特性过渡到半导体特性,导致其呈现出负的电阻率温度系数。由于增强的电子极化效应,Al1-xNix纳米合金薄膜电阻率与温度的关系并不完全遵循半导体的热激发导电模型。
[Abstract]:AlNi nanocrystalline films were prepared by magnetron sputtering, and the resistivity of the films was measured by a self-made four-probe low temperature measurement system. The results show that the resistivity of pure Al and Ni nanocrystalline films shows positive temperature coefficient due to the interaction of electron-phonon and electron-magneton. The contribution of electron-magneton scattering to resistivity is mainly reflected in the high temperature region (80,300Kg), and in the low temperature region (40K) the contribution of electron-grain boundary / surface scattering to resistivity is dominant. The increase of Ni atom doping leads to the enhancement of disorder degree of nanocrystalline thin films. As a result, the Al1-xNix nanocrystalline films are gradually transitioned from the metal properties of the crystals to the semiconductor properties, resulting in a negative temperature coefficient of resistivity. Because of the enhanced electron polarization effect, the relationship between resistivity and temperature of Al _ 1-xNi _ x nanoalloy films does not completely follow the thermal induced conduction model of semiconductors.
【作者单位】：西南科技大学材料科学与工程学院;中国工程物理研究院激光聚变研究中心;
【基金】：西南科技大学研究生创新基金资助项目(17ycx012) 国家自然科学基金资助项目(11674291)
【分类号】：TB383.2

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