磁控溅射法制备Fe-Si-Al电磁屏蔽薄膜的性能研究

发布时间：2018-06-18 00:23

本文选题：Fe-Si-Al吸波薄膜 + 磁控溅射　；参考：《深圳大学》2015年硕士论文

【摘要】：电子产品带来方便的同时也带来电磁污染等问题,对设备的正常运行和人类的健康带来负面影响。解决这类问题的有效的方法是使用吸波材料,研究发现,Fe-Si-Al合金的质量比为85%Fe-9.5%Si-5.5%Al时,可获得高初始磁导率和电阻率,具有良好的吸波性能。但Fe-Si-Al合金硬且脆,传统吸波材料的制备方法为压制成型,即添加树脂、橡胶等粘接剂再压制成涂层或贴片使用,但粘接剂的添加会影响其吸波效果。本次研究采用磁控溅射法直接沉积得到Fe-Si-Al薄膜,不需要添加任何粘结剂,克服了添加剂对吸波性能的影响,进一步提高了吸波材料的应用范围。由于薄膜材料具有铁磁性,这种材料具有电磁屏蔽作用,因此在制备薄膜之前,先要研究靶材磁屏蔽的解决方案。再根据靶材性能特点以及靶材上各元素的溅射产额设计出合理的靶材尺寸、结构以及成分配比,并对三元合金靶和Fe靶加Si-Al靶的溅射方式进行比较,且对靶材的成分做优化调整。结果表明:改进后的溅射阴极具有高强度磁场,可满足铁磁性靶材磁控溅射的需要。相对Fe靶加Si-Al靶的溅射方式,三元合金靶具有更高的溅射速率,更符合实验需要。靶材成分经过优化后获得接近于Sendust成分的Fe-Si-Al吸波薄膜材料。在探索Fe-Si-Al薄膜的制备工艺的过程中发现发现:通入Ar气的流量与溅射电压呈负相关关系。衬底温度在50°C以下得到细晶或非晶等过渡态结构,150°C时峰强均匀,而200°C以上则在某一晶面上出现较强的峰。由于磁导率的测量对薄膜厚度有一定的要求,当溅射时间少于3h则厚度较薄,不利于磁导率的测试,沉积时间为3h可获得厚度为4um左右的薄膜材料,该厚度比较适合磁导率的测量。Fe含量百分比、溅射电流、薄膜厚度均随溅射电压的增大而增大,并在550-565V时可获得接近于Sendust成分的铁硅铝薄膜。因此得到制备Fe-Si-Al吸波薄膜材料的最佳工艺条件为:Ar气流量20sccm、衬底温度150°C、溅射电压550V、溅射电流0.9A、溅射时间3h。再采用不同表征手段,如高分辨率扫描电镜、X射线衍射分析仪、光谱仪、X射线荧光光谱分析仪、射频阻抗/材料分析仪、四探针电阻测量仪、等设备分别对薄膜材料进行表面微观形貌、物相结构、成分配比、磁导率、电阻率等进行性能分析兵探究其机理,结果发现:在Sendust成分点附近的铁硅铝薄膜颗粒尺寸较大,类似于椭圆形状,且薄膜呈柱状生长形态。样品的物相结构为稳定的α-Fe(Si,Al)置换固溶体,其电阻率随着硅含量的增加而升高。且μ′、μ″值均比现有市场上抽检的样品值大。
[Abstract]:Electronic products not only bring convenience, but also bring electromagnetic pollution and other problems, which have negative effects on the normal operation of equipment and human health. The effective method to solve this kind of problem is to use absorbing materials. It is found that when the mass ratio of Fe-Si-Al alloy is 85-9.5Si-5.5Al, the high initial permeability and resistivity can be obtained. But Fe-Si-Al alloy is hard and brittle. The traditional preparation method of absorbing material is compaction molding, that is, adding resin, rubber and other adhesive agents to be used as coating or patch, but the addition of adhesive will affect the absorbing effect of Fe-Si-Al alloy. In this study, Fe-Si-Al thin films were prepared by magnetron sputtering without adding any binder, which overcame the influence of additives on the absorbing properties and further improved the range of application of the absorbing materials. Because the thin film material has ferromagnetism and this material has electromagnetic shielding effect, it is necessary to study the solution of target magnetic shielding before preparing the film. According to the characteristics of the target and the sputtering yield of each element on the target, the reasonable size, structure and composition ratio of the target are designed, and the sputtering methods of the ternary alloy target and the Fe target with Si-Al target are compared. The composition of the target material was optimized and adjusted. The results show that the improved sputtering cathode has a high intensity magnetic field and can meet the needs of ferromagnetic target magnetron sputtering. Compared with Fe target with Si-Al target, the ternary alloy target has higher sputtering rate and meets the need of experiment. The Fe-Si-Al thin film material which is close to the Sendust component is obtained after the target composition is optimized. It is found that the flux of ar gas is negatively related to the sputtering voltage in the process of preparing Fe-Si-Al thin films. When the substrate temperature is below 50 掳C, the peak intensity is uniform at 150 掳C in the transition structure of fine or amorphous structure, and a strong peak appears on a certain crystal plane above 200 掳C. The thickness of thin films is required by the measurement of permeability. When the sputtering time is less than 3 h, the thickness of thin films is thin, which is not good for the measurement of permeability. The film with thickness of about 4um can be obtained when the deposition time is 3 h. The thickness is suitable for the measurement of permeability. The percentage of Fe content, the sputtering current and the thickness of the film increase with the increase of sputtering voltage, and the Fe-Si-Al thin films with close to Sendust composition can be obtained at 550-565V. Therefore, the optimum conditions for preparing Fe-Si-Al films are as follows: flow rate of 20 sccm, substrate temperature of 150 掳C, sputtering voltage of 550 V, sputtering current of 0.9 A, sputtering time of 3 h. Different characterization methods were used, such as high resolution scanning electron microscope X-ray diffraction analyzer, spectrometer X ray fluorescence spectrum analyzer, radio frequency impedance / material analyzer, four probe resistance measuring instrument, The surface microstructure, phase structure, composition ratio, permeability, resistivity and so on of the thin film materials were analyzed respectively. The results showed that the particle size of the Fe-SiAl film near the Sendust composition point was larger. It is similar to elliptical shape, and the film is columnar. The phase structure of the sample is a stable 伪 -FeSI-Si-Al replacement solid solution, and its resistivity increases with the increase of silicon content. Moreover, the values of 渭 "and 渭" are higher than those of samples sampled in the existing market.
【学位授予单位】：深圳大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

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