GOCuO纳米复合结构的制备及场发射特性

发布时间：2018-06-21 03:26

本文选题：CuO纳米片 + 氧化石墨烯　；参考：《西北师范大学学报(自然科学版)》2017年02期

【摘要】：采用简便的溶剂热法制备垂直取向的氧化铜(CuO)纳米片阵列膜,然后将氧化石墨烯(GO)溶胶旋涂于CuO薄膜表面,形成由CuO纳米片顶端支撑的GO/CuO纳米复合结构.场发射实验结果显示,与纯的CuO纳米片相比,GO/CuO纳米复合结构的开启电场从2.4V·μm~(-1)降至1.7V·μm~(-1),电流密度增大,发射稳定性也明显提高.实验结果表明,样品场发射性能的显著增强应源于CuO纳米片的垂直取向、超薄的刃状边缘以及GO的褶皱和凸起协同形成更多有效的场发射位点.该纳米复合结构制备方法简便,高效经济,在场发射高亮电子源以及其它真空纳米电子器件中具有潜在的应用价值.
[Abstract]:A simple solvothermal method was used to prepare the perpendicular copper oxide (CuO) nanocrystalline array films. Then the graphene oxide (GOO) sol was spin-coated on the surface of the CuO films to form a goo / CuO nanocomposite structure supported by the top of the CuO nanoparticles. The results of field emission experiments show that compared with the pure CuO nanostructures, the starting electric field of the CuO / CuO nanocomposite structure decreases from 2.4 V 渭 m ~ (-1) to 1.7 V ~ (-1) 渭 m ~ (-1), the current density increases and the emission stability is improved. The experimental results show that the obvious enhancement of the field emission properties of the samples should be attributed to the vertical orientation of CuO nanocrystals, the ultra-thin edge and the fold and protuberance of go to form more effective field emission sites. The method of preparing nanocomposite structure is simple, efficient and economical. It has potential application value in field emission highlight electron source and other vacuum nanoelectronic devices.
【作者单位】：西北师范大学物理与电子工程学院甘肃省原子分子物理与功能材料重点实验室;
【基金】：国家自然科学基金资助项目(11264034,11474231,11364036,11464041) 甘肃省高等学校基本科研业务费专项基金
【分类号】：TB383.1

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