极化电场对PZT铁电薄膜材料光伏效应的影响研究

发布时间：2018-06-21 19:05

  本文选题：铁电薄膜 + 光伏效应　； 参考：《西安理工大学》2017年硕士论文

【摘要】：随着太阳能光伏发电技术的不断发展,Si系、化合物系、铁电系等各种新型光伏材料不断被研究开发,成为新能源材料研究领域的热点之一。其中,铁电材料具有独特的反常光生伏打效应,具有较大的开路电压,展现出独特的应用优势。但是其光电转换效率非常有限,成为制约其产业化应用研究的关键技术。本研究针对铁电光伏材料的光电转换效率的改善这一问题展开,采用溶胶-凝胶法,以醋酸铅、乙酰丙酮锆和钛酸丁酯等为原料,制备多晶锆钛酸铅Pb(Zr0.4Ti0.6)O3(文中简称PZT)铁电薄膜,结合XRD、光伏性能测试、UV-Vis.吸收谱等性能表征手段对PZT铁电薄膜进行了相关研究,主要针对以镍酸镧(LaNiO3)为底电极的PZT铁电薄膜和ZnO/PZT复合薄膜的制备,以及极化电场对其光伏特性的改善进行了研究,结果表明:(1)、采用摩尔比为Pb:Zr:Ti=1.1:0.4:0.6的化学计量比制备PZT薄膜,经650℃高温热处理2h后,可获得具有良好光电性能的PZT薄膜,其光电转换效率可以达到1.13×10-4%。在此基础上,采用溶胶凝胶法制备ZnO/PZT复合薄膜,其光电转换效率可以达到3.86×10-3%,相比PZT铁电薄膜可以提高30倍左右。(2)、采用不同的极化电场对PZT铁电薄膜进行极化处理,在+10V极化时,PZT铁电薄膜可获得最高的光电转换效率1.17×10-3%,相比未极化状态提高10倍左右。(3)、采用不同的极化电场对ZnO/PZT复合薄膜进行极化处理,在+10V极化时,光电转换效率可以达到1.64×10-2%,相比未极化状态提高4倍左右。
[Abstract]:With the development of solar photovoltaic technology, various kinds of new photovoltaic materials, such as Si system, compound system, ferroelectric system and so on, have been researched and developed continuously, which has become one of the hot spots in the field of new energy materials. Among them, ferroelectric materials have unique anomalous photovoltaic effect and large open circuit voltage, showing unique application advantages. However, its photoelectric conversion efficiency is very limited, which has become the key technology that restricts the research of its industrialization application. In order to improve the photoelectric conversion efficiency of ferroelectric photovoltaic materials, the polycrystalline lead zirconate titanate thin films (PZT3) were prepared by sol-gel method using lead acetate, acetylacetone zirconium and butyl titanate as raw materials. Combined with XRD, the photovoltaic properties were tested by UV-Vis. PZT ferroelectric thin films have been studied by means of absorption spectra and other characterization methods. The preparation of PZT ferroelectric thin films and ZnO / PZT composite thin films with LaNiO3) as substrate electrode and the improvement of photovoltaic properties by polarization electric field have been studied. The results showed that the PZT thin films were prepared by the stoichiometric ratio of Pb: Zr: Tiao 1.1: 0.4: 0.6. After heat treatment at 650 鈩，

本文编号：2049700