高功率脉冲磁控溅射金属原子离化率的调控及其对薄膜性能的影响

发布时间：2018-06-22 03:59

本文选题：高功率脉冲磁控溅射 + 峰值电流　；参考：《西南交通大学》2016年硕士论文

【摘要】：高功率脉冲磁控溅射技术是近年来发展起来的一种新型的物理气相沉积方法,等离子体密度可高达1018m-3数量级,靶材原子的离化率可高达90%。金属离子在沉膜过程中受磁场磁力线和靶上施加的负电压的作用,被束缚在靶附近,大大降低了基片前的离子数量。然而在薄膜的工业应用中,基片前的金属离化率将显著影响薄膜的结构和性能。因此,研究影响溅射靶金属原子离化率的关键因素以及基片前的金属原子离化率对于薄膜的沉积具有重要意义。本文采用等离子体发射光谱法研究了峰值电流对高功率脉冲磁控溅射沉积纯钛薄膜过程中等离子体组分及离化率的影响。采用发射光谱法及离子流检测装置分析了峰值电流变化对基片前的等离子体组分、金属原子离化率及纯钛薄膜结构、性能的影响,研究结果表明,在平均功率相同的情况下,随着峰值电流的增加,基片前的等离子体密度及金属原子的离化率增加,而纯钛薄膜沉积速率却随峰值电流的增加而降低；随着基片前金属原子离化率的增加,纯钛薄膜的残余应力由拉应力变为压应力,且钛膜的晶粒大小和表面粗糙度随离化率的增加而降低。采用高功率脉冲磁控溅射技术沉积氮化钛薄膜,研究当溅射平均功率相同时,溅射峰值电流对金属原子离化程度、氮化钛薄膜结构及力学性能的影响。研究结果表明,在溅射平均功率相同时,氮化钛薄膜的沉积速率随峰值电流的增加而降低。较低峰值电流时,氮化钛薄膜(111)晶面平行样品表面择优生长；高的峰值电流导致了高的金属离化率,提高了离子对薄膜的轰击,氮化钛薄膜(200)晶面平行样品表面择优生长。金属离化率的提高使Ti离子与N的反应更加充分,易于生成饱和的氮化钛,膜层表现出较高的硬度与良好的膜基结合力。
[Abstract]:High power pulsed magnetron sputtering is a new physical vapor deposition method developed in recent years. The plasma density can be as high as 1018m-3 and the ionization rate of target atoms can be as high as 90. Metal ions are bound in the vicinity of the target by the magnetic field line of force and the negative voltage applied on the target during the deposition process, which greatly reduces the number of ions in front of the substrate. However, the metal ionization rate in front of the substrate will significantly affect the structure and properties of the films in industrial applications. Therefore, the study of the key factors affecting the ionization rate of metal atoms in the sputtering target and the ionization rate of metal atoms before the substrate are of great significance for the deposition of the films. The effect of peak current on plasma composition and ionization rate of pure titanium thin films deposited by high power pulsed magnetron sputtering has been studied by plasma emission spectrometry. The effects of peak current variation on plasma composition, atomic ionization rate, structure and properties of pure titanium thin films were analyzed by means of emission spectroscopy and ion current detector. The results show that the average power is the same as the average power. With the increase of peak current, the plasma density and the ionization rate of metal atoms increase, while the deposition rate of pure titanium film decreases with the increase of peak current, and the ionization rate of metal atoms increases with the increase of peak current. The residual stress of pure titanium film changed from tensile stress to compressive stress, and the grain size and surface roughness of titanium film decreased with the increase of ionization rate. Titanium nitride thin films were deposited by high power pulsed magnetron sputtering. The effects of sputtering peak current on the ionization degree of metal atoms, structure and mechanical properties of titanium nitride films were studied when the average sputtering power was the same. The results show that the deposition rate of titanium nitride films decreases with the increase of peak current when the average sputtering power is the same. The higher peak current leads to higher ionization rate and higher ion bombardment of titanium nitride film (111), and the surface of titanium nitride film (200) is preferred to grow on parallel surface. With the increase of metal ionization rate, the reaction of Ti ion with N is more complete, and it is easy to form saturated titanium nitride. The film shows high hardness and good adhesion to film substrate.
【学位授予单位】：西南交通大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：O614.811;TB383.2

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