类金刚石碳薄膜材料的高功率脉冲磁控溅射制备

发布时间：2018-06-28 10:50

  本文选题：类金刚石碳 + 高功率脉冲磁控溅射　； 参考：《山东大学》2015年硕士论文

【摘要】：类金刚石碳(Diamond like carbon, DLC)薄膜是一种由sp3和sp2键组成的非晶质碳膜,显示出优良的机械、光学、电学等性能。高功率脉冲磁控溅射技术(High power impulse magnetron sputtering, HiPIMS)具有离子化程度高、离子能量低且能量分布集中、制备的薄膜均匀致密等优点。本文分别采用直流磁控溅射和HiPIMS方法制备DLC薄膜,探讨了溅射工艺参数——溅射气压、溅射负偏压、溅射温度等对DLC薄膜微观结构和物理性能的影响,并探究了氮掺杂对DLC薄膜微观结构和物理性能的影响。研究结果如下：1、直流磁控溅射制备DLC薄膜工艺过程稳定,可以得到大面积、厚度均匀的DLC薄膜。DLC薄膜的表面形貌受溅射气压和溅射负偏压影响较大,随溅射气压的降低和溅射负偏压的增加,薄膜的表面粗糙度降低。DLC薄膜的sp3键含量受溅射气压影响较大,0.4Pa气压制备的样品的sp3键含量明显高于1Pa气压制备的样品。直流磁控溅射方法得到的DLC薄膜的纳米硬度普遍在10GPa以下。2、HiPIMS技术制备DLC薄膜存在稳定放电的溅射电压和溅射气压区间。随溅射气压的降低和溅射负偏压的增加,DLC薄膜的表面颗粒粒径减小。随溅射负偏压由50V增加到100V和溅射气压由2Pa减小到1Pa,薄膜的D峰和G峰的相对强度ID/1G减小,DLC薄膜的sp3含量增加。薄膜的纳米硬度与ID/IG成负相关,1Pa溅射气压、100V溅射负偏压制备的样品的纳米硬度数值最高,达到18.4GPa。相比于直流磁控溅射技术,HiPIMS技术制备的DLC薄膜显示出较高的纳米硬度。3、使用HiPIMS技术在N2和Ar混合溅射气体中实现氮掺杂的DLC薄膜(DLC:N)的制备。随N2流量比例的增加,DLC：N薄膜的粗糙度增加,薄膜sp3比例降低,薄膜纳米硬度由16.7GPa降低至11.1GPa。50V溅射负偏压的施加,DLC:N薄膜变得致密,纳米硬度由13.7GPa增加至16.0GPa。300℃下制备的DLC:N薄膜的sp3比例降低,但纳米硬度由16.7GPa增加至18.8GPa。
[Abstract]:Diamond like carbon (DLC) films are amorphous carbon films composed of sp3 and sp2 bonds, which show excellent mechanical, optical and electrical properties. High power pulsed magnetron sputtering (power impulse magnetron sputtering, HiPIMS) has the advantages of high degree of ionization, low ion energy and concentrated energy distribution, and the thin films prepared are uniform and compact. DLC thin films were prepared by DC magnetron sputtering and HiPIMS respectively. The effects of sputtering parameters such as sputtering pressure, sputtering negative bias voltage and sputtering temperature on the microstructure and physical properties of DLC films were discussed. The effects of nitrogen doping on the microstructure and physical properties of DLC films were investigated. The results are as follows: 1. The process of DLC thin films prepared by DC magnetron sputtering is stable. The surface morphology of DLC thin films with large area and uniform thickness can be greatly affected by sputtering pressure and negative bias voltage. With the decrease of sputtering pressure and the increase of negative bias voltage, the surface roughness of the films decreased. The sp3 bond content of DLC thin films was greatly affected by sputtering pressure. The sp3 bond content of the samples prepared at 0.4 Pa pressure was significantly higher than that of the samples prepared at 1 Pa pressure. The nanocrystalline hardness of DLC films obtained by DC magnetron sputtering is generally below 10 GPA. 2 / HiPIMS technique has stable discharge sputtering voltage and sputtering pressure range. With the decrease of sputtering pressure and the increase of negative bias voltage, the surface particle size of DLC films decreases. With the increase of negative sputtering bias voltage from 50 V to 100 V and the decrease of sputtering pressure from 2 Pa to 1 Pa, the relative strength of D and G peaks decreases with the increase of sp3 content. The nanocrystalline hardness of the films is negatively correlated with that of ID / IG. The nanohardness of the samples prepared by negative bias voltage sputtering at 1 Pa sputtering pressure is the highest, reaching 18.4GPa. Compared with the DC magnetron sputtering technique (HiPIMS), the DLC thin films prepared by HiPIMS have higher nano-hardness. HiPIMS is used to fabricate nitrogen-doped DLC films in N _ 2 and ar mixed sputtering gases. With the increase of N _ 2 flow rate, the roughness of DLC _ (1) N thin films increases, the sp3 ratio decreases, and the nano-hardness decreases from 16.7 GPA to 11.1GPa.50V sputtering negative bias voltage. The sp3 ratio of DLC: n films prepared at 300 鈩，

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