一维ZnSe纳米线及纳米带的振动特性研究
发布时间：2018-07-18 14:24
【摘要】：一维纳米材料由于其特殊而优异的光电性能和在纳米光电子器件领域的潜在应用而受到人们的广泛关注。影响其优异光电性能的因素有很多如材料结构、形貌、缺陷、晶格振动等,其中材料的晶格振动和光电特性密切相关,对材料的物性甚至基于材料的器件的性能都有着很重要的影响。晶格振动也是研究固体宏观性质和微观过程的重要基础；而拉曼散射是研究晶格振动特性十分重要的手段。通过拉曼光谱可以得到材料的对称性,组分,晶格动力学,结构相变,应力以及态密度等信息。本论文以ZnSe, Ge, CdSe为原材料,通过一步热蒸发法分别制备出ZnSe纳米线、ZnSe纳米带、Ge/GeSe异质结纳米线,并用变温拉曼谱研究其振动特性。本文主要的内容如下：1.阐述了拉曼光谱的基本原理,综述了它在在一维纳米线的振动特性研究的进展。2.以ZnSe粉末为原材料,利用一步热蒸发法合成了ZnSe纳米线,利用变温拉曼谱研究其振动特性。结果发现,ZnSe纳米线的TO和LO振动模都随着温度的升高出现红移和展宽。一些倍频声学模式和多声子散射模式仅在高温下出现。TA(L)模的散射强度随温度的升高而升高,而表面模在温度高于296 K时消失。3.在上述工作的基础上,以ZnSe粉末为原材料,也制备出ZnSe纳米带。建立了Gruneisen常数与振动模式之间的定量关系,得出ZnSe纳米带的Gruneisen常数。进一步计算得出ZnSe纳米带的热膨胀系数。4.以Ge和CdSe(或ZnSe)粉末为原材料,合成了Ge/GeSe异质结纳米线,通过变温拉曼谱研究了Ge/GeSe异质结纳米线中的声子动力学特性。结果表明,声子行为强烈依赖于温度的变化。通过XRD衍射花样图和拉曼谱计算出了异质结纳米线中的应力。在异质结纳米线中也发现了Ge亚纳米线的声子局域效应。
[Abstract]:One-dimensional nanomaterials have attracted wide attention due to their special and excellent optoelectronic properties and potential applications in the field of nano-optoelectronic devices. There are many factors affecting its excellent photoelectric properties, such as the structure, morphology, defects, lattice vibration, etc. Among them, the lattice vibration and the photoelectric properties of the materials are closely related. It has an important effect on the physical properties of materials and even on the properties of devices based on materials. Lattice vibration is also an important basis for studying macroscopic properties and microscopic processes of solid, and Raman scattering is a very important means to study the characteristics of lattice vibration. The information of symmetry, composition, lattice dynamics, structural phase transition, stress and density of states can be obtained by Raman spectroscopy. In this thesis, ZnSe nanowires (ZnSe / GeSe heterojunction nanowires) were prepared by one step thermal evaporation method using ZnSee, GeSe and CdSe as raw materials. The vibrational characteristics of ZnSe nanowires were studied by using variable-temperature Raman spectroscopy. The main contents of this paper are as follows: 1. The basic principle of Raman spectroscopy and its progress in the study of vibration characteristics of one-dimensional nanowires are reviewed in this paper. ZnSe nanowires were synthesized from ZnSe powder by one step thermal evaporation method. The vibrational characteristics of ZnSe nanowires were studied by variable temperature Raman spectroscopy. The results show that the vibration modes of to and Lo of ZnSe nanowires are red-shifted and broadened with the increase of temperature. Some frequency-doubled acoustic modes and multi-phonon scattering modes only increase the scattering intensity of the .TA (L) mode at high temperature, while the surface mode disappears at 296K. Based on the above work, ZnSe nanobelts were also prepared using ZnSe powder as raw material. The quantitative relationship between the Gruneisen constant and the vibrational mode was established, and the Gruneisen constant of ZnSe nanobelts was obtained. The coefficient of thermal expansion of ZnSe nanobelts was further calculated. GE / GeSe heterojunction nanowires were synthesized by using GE and CdSe (or ZnSe) powders as raw materials. The phonon dynamics of GE / GeSe heterojunction nanowires were studied by means of variable temperature Raman spectroscopy. The results show that the phonon behavior is strongly dependent on the temperature change. The stress in heterojunction nanowires was calculated by XRD diffraction patterns and Raman spectra. The phonon localization effect of GE nanowires was also found in heterojunction nanowires.
【学位授予单位】：东华大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O614.241;TB383.1
本文编号：2132179
[Abstract]:One-dimensional nanomaterials have attracted wide attention due to their special and excellent optoelectronic properties and potential applications in the field of nano-optoelectronic devices. There are many factors affecting its excellent photoelectric properties, such as the structure, morphology, defects, lattice vibration, etc. Among them, the lattice vibration and the photoelectric properties of the materials are closely related. It has an important effect on the physical properties of materials and even on the properties of devices based on materials. Lattice vibration is also an important basis for studying macroscopic properties and microscopic processes of solid, and Raman scattering is a very important means to study the characteristics of lattice vibration. The information of symmetry, composition, lattice dynamics, structural phase transition, stress and density of states can be obtained by Raman spectroscopy. In this thesis, ZnSe nanowires (ZnSe / GeSe heterojunction nanowires) were prepared by one step thermal evaporation method using ZnSee, GeSe and CdSe as raw materials. The vibrational characteristics of ZnSe nanowires were studied by using variable-temperature Raman spectroscopy. The main contents of this paper are as follows: 1. The basic principle of Raman spectroscopy and its progress in the study of vibration characteristics of one-dimensional nanowires are reviewed in this paper. ZnSe nanowires were synthesized from ZnSe powder by one step thermal evaporation method. The vibrational characteristics of ZnSe nanowires were studied by variable temperature Raman spectroscopy. The results show that the vibration modes of to and Lo of ZnSe nanowires are red-shifted and broadened with the increase of temperature. Some frequency-doubled acoustic modes and multi-phonon scattering modes only increase the scattering intensity of the .TA (L) mode at high temperature, while the surface mode disappears at 296K. Based on the above work, ZnSe nanobelts were also prepared using ZnSe powder as raw material. The quantitative relationship between the Gruneisen constant and the vibrational mode was established, and the Gruneisen constant of ZnSe nanobelts was obtained. The coefficient of thermal expansion of ZnSe nanobelts was further calculated. GE / GeSe heterojunction nanowires were synthesized by using GE and CdSe (or ZnSe) powders as raw materials. The phonon dynamics of GE / GeSe heterojunction nanowires were studied by means of variable temperature Raman spectroscopy. The results show that the phonon behavior is strongly dependent on the temperature change. The stress in heterojunction nanowires was calculated by XRD diffraction patterns and Raman spectra. The phonon localization effect of GE nanowires was also found in heterojunction nanowires.
【学位授予单位】：东华大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O614.241;TB383.1
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