基于铜催化的无定形碳纳米管制备及场发射特性研究
发布时间：2018-12-12 06:18
【摘要】：采用化学气相沉积法(CVD)以酞菁铜(CuPc)为催化剂、甲烷为碳源在二氧化硅(SiO_2)基底上合成了碳纳米管薄膜(CNTs),经过扫描电镜(SEM)表征发现,合成的碳纳米管外径较大,范围约在140~280nm,长度约在10μm以上。拉曼光谱分析表明合成的碳纳米管为无定形(α-CNTs)结构。通过透射电镜(TEM)可以看出所制备α-CNTs管内中空,管壁厚度不均匀,约为20~100nm。采用二极管结构,在真空室中真空度为2×10-4 Pa时进行了场发射特性测试,测试结果表明SiO_2(α-CNTs)薄膜的场发射开启场强为1.05V/μm。通过计算得出薄膜的场增强因子为1.32×104,结果表明SiO_2(α-CNTs)具有良好的场发射特性。
[Abstract]:Carbon nanotubes (CNTs),) thin films were synthesized by chemical vapor deposition (CVD) on silicon dioxide (SiO_2) substrate using copper phthalocyanine (CuPc) as catalyst and methane as carbon source. (CNTs), was characterized by scanning electron microscope (SEM). The synthesized carbon nanotubes have a large outer diameter, with a range of about 140 ~ 280 nm and a length of more than 10 渭 m. Raman spectroscopy showed that the synthesized carbon nanotubes were 伪-CNTs structure. Transmission electron microscope (TEM) showed that the 伪-CNTs was hollow in the tube, and the thickness of the wall was not uniform, about 20 ~ 100 nm. The field emission characteristics of SiO_2 (伪-CNTs) thin films were measured with a vacuum of 2 脳 10 ~ (-4) Pa. The results show that the field intensity of SiO_2 (伪-CNTs) thin films is 1.05V/ 渭 m. The field enhancement factor of the film is 1.32 脳 10 ~ 4. The results show that SiO_2 (伪-CNTs) has good field emission characteristics.
【作者单位】： 郑州航空工业管理学院理学院;河南省航空材料与应用技术重点实验室;
【基金】：国家自然科学基金项目(61274012、11404291) 河南省科技创新杰出人才项目(164200510006) 航空科学基金项目(2014ZF55013、2015ZF55013) 河南省高等学校重点科研项目计划(16B140005)
【分类号】：TB383.1;TQ127.11
本文编号：2374080
[Abstract]:Carbon nanotubes (CNTs),) thin films were synthesized by chemical vapor deposition (CVD) on silicon dioxide (SiO_2) substrate using copper phthalocyanine (CuPc) as catalyst and methane as carbon source. (CNTs), was characterized by scanning electron microscope (SEM). The synthesized carbon nanotubes have a large outer diameter, with a range of about 140 ~ 280 nm and a length of more than 10 渭 m. Raman spectroscopy showed that the synthesized carbon nanotubes were 伪-CNTs structure. Transmission electron microscope (TEM) showed that the 伪-CNTs was hollow in the tube, and the thickness of the wall was not uniform, about 20 ~ 100 nm. The field emission characteristics of SiO_2 (伪-CNTs) thin films were measured with a vacuum of 2 脳 10 ~ (-4) Pa. The results show that the field intensity of SiO_2 (伪-CNTs) thin films is 1.05V/ 渭 m. The field enhancement factor of the film is 1.32 脳 10 ~ 4. The results show that SiO_2 (伪-CNTs) has good field emission characteristics.
【作者单位】： 郑州航空工业管理学院理学院;河南省航空材料与应用技术重点实验室;
【基金】：国家自然科学基金项目(61274012、11404291) 河南省科技创新杰出人才项目(164200510006) 航空科学基金项目(2014ZF55013、2015ZF55013) 河南省高等学校重点科研项目计划(16B140005)
【分类号】：TB383.1;TQ127.11
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1 张琦锋,于洁,宋教花,张耿民,张兆祥,薛增泉,吴锦雷;碳纳米管阵列的气相沉积制备及场发射特性[J];物理化学学报;2004年04期
，本文编号：2374080
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