柔性基ZAO薄膜的制备与研究
发布时间：2019-01-21 21:18
【摘要】：本文采用直流磁控溅射法在柔性衬底上制备了ZAO薄膜,并利用附着力测试仪、X射线衍射仪、扫描电子显微镜、四探针测试仪、紫外可见分光光度计等测试仪器表征薄膜性能。再通过研究氩气压强、溅射功率、溅射时间对薄膜性能的影响,获得最佳工艺,并在此工艺下分别在聚酰亚胺(PI)和玻璃衬底上制备ZAO薄膜,最后对其进行性能对比。研究发现,10-14Pa氩气压强下溅射的薄膜都具有明显的C轴择优取向,在氩气压强为10-12Pa范围内,增大氩气压强可以提升薄膜结晶质量,在12Pa时,晶粒尺寸最大,薄膜导电性能最好,并能提高500-800nm波段的透过率,但是更大的压强会降低薄膜的性能;改变溅射功率的大小对薄膜的(002)峰择优取向的程度影响较大,过高过低的功率都会降低薄膜在500-800nm波段的透过率;随着溅射时间的增加,膜的厚度增大,薄膜的结构、晶粒大小、电学特性都得到了优化。总结这几个工艺条件得到制备优质性能的ZAO薄膜的最佳制备条件为:本底真空3103-′Pa,氩气流量为12sccm,氩气压强为12Pa,溅射功率为50W,溅射时间为30min。采用最佳制备工艺条件,分别在PI膜和玻璃上沉积ZAO薄膜时,可能由于PI膜本身的性质,表面惰性较大,使其与ZAO薄膜的晶格匹配稍差,因此PI膜上获得的薄膜的结构、电学性能等都较玻璃衬底上的薄膜差,但是在550-800nm波段,PI衬底沉积的ZAO薄膜的平均绝对透过率为96.5%,高于玻璃衬底的94.5%。
[Abstract]:The ZAO film was prepared on the flexible substrate by direct current magnetron sputtering, and the performance of the film was characterized by an adhesion tester, an X-ray diffractometer, a scanning electron microscope, a four-probe tester, an ultraviolet-visible spectrophotometer and the like. The influence of the argon pressure, the sputtering power and the sputtering time on the performance of the film was also studied. The optimum process was obtained, and the ZAO film was prepared on the polycarbodiimide (PI) and the glass substrate, respectively, and the performance was compared. It is found that the films sputtered under the pressure of 10-14Pa have the obvious C-axis preferred orientation, and the argon pressure can be increased to 10-12Pa, the crystallization quality of the film can be improved by increasing the argon pressure, and at 12Pa, the grain size is the largest, the film conductivity can be best, and the transmittance of the 500-800nm wave band can be improved, but the larger pressure can lower the performance of the film, the influence of changing the size of the sputtering power on the preferential orientation of the (002) peak of the thin film is large, the over-high power can reduce the transmittance of the film in the range of 500-800nm, and the thickness of the film is increased, the structure of the film is increased with the increase of the sputtering time, The grain size and the electrical property are optimized. The optimum conditions for preparing the ZAO thin film with high quality are as follows: the background vacuum is 3103-1Pa, the flow rate of argon is 12sccm, the pressure of argon is 12Pa, the sputtering power is 50W, and the sputtering time is 30min. By adopting the best preparation process conditions, when the ZAO film is deposited on the PI film and the glass respectively, the surface inertia of the PI film can be relatively large due to the nature of the PI film, so that the lattice matching with the ZAO thin film is slightly poor, so that the structure of the thin film obtained on the PI film, In the 550-800nm band, the average absolute transmittance of the ZAO film deposited by the PI substrate is 96.5%, which is higher than 94.5% of the glass substrate.
【学位授予单位】：暨南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2
[Abstract]:The ZAO film was prepared on the flexible substrate by direct current magnetron sputtering, and the performance of the film was characterized by an adhesion tester, an X-ray diffractometer, a scanning electron microscope, a four-probe tester, an ultraviolet-visible spectrophotometer and the like. The influence of the argon pressure, the sputtering power and the sputtering time on the performance of the film was also studied. The optimum process was obtained, and the ZAO film was prepared on the polycarbodiimide (PI) and the glass substrate, respectively, and the performance was compared. It is found that the films sputtered under the pressure of 10-14Pa have the obvious C-axis preferred orientation, and the argon pressure can be increased to 10-12Pa, the crystallization quality of the film can be improved by increasing the argon pressure, and at 12Pa, the grain size is the largest, the film conductivity can be best, and the transmittance of the 500-800nm wave band can be improved, but the larger pressure can lower the performance of the film, the influence of changing the size of the sputtering power on the preferential orientation of the (002) peak of the thin film is large, the over-high power can reduce the transmittance of the film in the range of 500-800nm, and the thickness of the film is increased, the structure of the film is increased with the increase of the sputtering time, The grain size and the electrical property are optimized. The optimum conditions for preparing the ZAO thin film with high quality are as follows: the background vacuum is 3103-1Pa, the flow rate of argon is 12sccm, the pressure of argon is 12Pa, the sputtering power is 50W, and the sputtering time is 30min. By adopting the best preparation process conditions, when the ZAO film is deposited on the PI film and the glass respectively, the surface inertia of the PI film can be relatively large due to the nature of the PI film, so that the lattice matching with the ZAO thin film is slightly poor, so that the structure of the thin film obtained on the PI film, In the 550-800nm band, the average absolute transmittance of the ZAO film deposited by the PI substrate is 96.5%, which is higher than 94.5% of the glass substrate.
【学位授予单位】：暨南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2
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