铜辅助化学腐蚀条件对多孔硅的影响
发布时间：2019-01-22 11:25
【摘要】：以铜(Cu)作为催化剂,采用两步化学腐蚀法成功制备了微纳米多孔硅(PS)。本文方法成本低廉、操作简易。系统研究了腐蚀液中H2O2浓度、Si衬底掺杂浓度、腐蚀液温度和腐蚀时间对PS表面形貌和腐蚀深度的影响,并得到最佳制备参数。高、低掺Si衬底所采用的最佳配比腐蚀液中的H2O2浓度分别达到0.70mol/L和0.24mol/L。在25℃腐蚀液中,腐蚀2h得到约200nm深的纳米级孔洞,其表面反射率在宽波段内降低到5%以下;而在50℃腐蚀液中,经过2~4h的腐蚀,可得到14~41μm深的结构稳定的微纳米级孔洞。文中还对Cu辅助腐蚀与其他金属辅助腐蚀(MACE)作了对比,分析了Cu辅助腐蚀获得锥状孔洞的原因和机理。
[Abstract]:Microporous silicon (PS).) was successfully prepared by two-step chemical etching with copper (Cu) as catalyst. This method is cheap and easy to operate. The effects of H2O2 concentration, Si substrate doping concentration, corrosion temperature and corrosion time on the surface morphology and corrosion depth of PS were systematically studied, and the optimum preparation parameters were obtained. The concentration of H2O2 in the high and low doped Si substrate is 0.24 mol / L and 0.24 mol / L, respectively. In the corrosion solution at 25 鈩，
本文编号：2413169
[Abstract]:Microporous silicon (PS).) was successfully prepared by two-step chemical etching with copper (Cu) as catalyst. This method is cheap and easy to operate. The effects of H2O2 concentration, Si substrate doping concentration, corrosion temperature and corrosion time on the surface morphology and corrosion depth of PS were systematically studied, and the optimum preparation parameters were obtained. The concentration of H2O2 in the high and low doped Si substrate is 0.24 mol / L and 0.24 mol / L, respectively. In the corrosion solution at 25 鈩，
本文编号：2413169
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