转移矩阵法求解纤锌矿Ⅲ族氮化物多层核壳纳米线中的界面光学声子
发布时间：2019-03-28 16:32
【摘要】：纤锌矿GaN及其三元混晶广泛用于光电器件,可通过调制材料组分改进其性质.核壳结构纳米线(CSNW)利用集成度高,可克服短沟道效应以及通过减少表面缺陷获得高电子迁移率等优势在纳米器件领域展示出应用前景.多层核壳结构纳米线(CMSNWs)常用作发光二极管、太阳能电池以及晶体管的功能单元.在低维多层体系中,界面光学声子(IOP)与电子的相互作用对光电性质有重要影响.本文以GaN-CSNW为例讨论纤锌矿CMSNWs中界面光学声子的转移矩阵法(TMM)求解.本文主要依据介电连续模型和单轴晶体模型,讨论多壳层核壳纳米线中IOP的转移矩阵数值解法及其特点.本文以三层及四层GaN/Inxa1-xN/InyGa1-yN/InzGa1-zN核壳纳米线为例,验证方法的适用性,并进一步讨论CMSNWs中IOP的种类、支数,及其存在条件、色散关系和声子静电势等特点.计算表明,转移矩阵法适用于CMSNWs中IOP的求解.IOP以界面的可能组合的方式分类,其特征如下(1)体系材料的特定组分下,存在特定种类的IOP,且各自有特定频率区间;(2)纤锌矿Ⅲ族氮化物CMSNWs中IOP的色散关系是所有相邻两层材料所组成的核壳纳米线(CSNW)中界面光学声子色散关系的组合,从而获得n界面CMSNWs中最多有2n支IOP的规律,与层状体系中的2n原则相符;(3)IOP静电势峰值的位置取决于多层核壳纳米线中各层材料In组分的大小.基于TMM,我们可以进一步讨论纤锌矿Ⅲ族氮化物CMSCWs中IOP相关的光电性质.
[Abstract]:Wurtzite GaN and its ternary mixed crystals are widely used in optoelectronic devices, and their properties can be improved by modulating the composition of materials. Core-shell nanowires (CSNW) with high integration can overcome the short channel effect and achieve high electron mobility by reducing surface defects. Multilayer core-shell nanowires (CMSNWs) are often used as functional units of light emitting diodes, solar cells and transistors. In the low-dimensional multilayer system, the interaction between the interface optical phonon (IOP) and the electron has an important effect on the photoelectric properties. In this paper, taking GaN-CSNW as an example, the transfer matrix method (TMM) of interface optical phonon in wurtzite CMSNWs is discussed. Based on the dielectric continuum model and uniaxial crystal model, the transfer matrix numerical solution of IOP in multi-shell core-shell nanowires and its characteristics are discussed in this paper. In this paper, three-layer and four-layer GaN/Inxa1-xN/InyGa1-yN/InzGa1-zN core-shell nanowires are taken as examples to verify the applicability of the method. The types, number of branches, existence conditions, dispersion relation and phonon electrostatic potential of IOP in CMSNWs are further discussed. The results show that the transfer matrix method is suitable for the solution of IOP in CMSNWs. IOPs are classified in the form of possible combinations of interfaces, and their characteristics are as follows: (1) there are specific types of IOP, in the specific component of the system material, and each has a specific frequency range; (2) the dispersion relation of IOP in wurtzite 鈪，
本文编号：2449039
[Abstract]:Wurtzite GaN and its ternary mixed crystals are widely used in optoelectronic devices, and their properties can be improved by modulating the composition of materials. Core-shell nanowires (CSNW) with high integration can overcome the short channel effect and achieve high electron mobility by reducing surface defects. Multilayer core-shell nanowires (CMSNWs) are often used as functional units of light emitting diodes, solar cells and transistors. In the low-dimensional multilayer system, the interaction between the interface optical phonon (IOP) and the electron has an important effect on the photoelectric properties. In this paper, taking GaN-CSNW as an example, the transfer matrix method (TMM) of interface optical phonon in wurtzite CMSNWs is discussed. Based on the dielectric continuum model and uniaxial crystal model, the transfer matrix numerical solution of IOP in multi-shell core-shell nanowires and its characteristics are discussed in this paper. In this paper, three-layer and four-layer GaN/Inxa1-xN/InyGa1-yN/InzGa1-zN core-shell nanowires are taken as examples to verify the applicability of the method. The types, number of branches, existence conditions, dispersion relation and phonon electrostatic potential of IOP in CMSNWs are further discussed. The results show that the transfer matrix method is suitable for the solution of IOP in CMSNWs. IOPs are classified in the form of possible combinations of interfaces, and their characteristics are as follows: (1) there are specific types of IOP, in the specific component of the system material, and each has a specific frequency range; (2) the dispersion relation of IOP in wurtzite 鈪，
本文编号：2449039
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