多孔低介电聚酰亚胺薄膜的制备及其性能表征

发布时间：2019-06-03 05:09

【摘要】：芯片制造技术的进步,对用作互联导线间电介质的低介电常数绝缘材料产生了需求。聚酰亚胺独特的主链结构,赋予其优异的物理、化学性能,包括热稳定性,化学稳定性,低介电性能和高绝缘性能,使其成为潜在的电介质材料,但其介电常数已经不能满足当前需求。本文通过引入气孔方法降低聚酰亚胺薄膜的介电常数,制备了不同孔隙率的多孔聚酰亚胺薄膜。通过复合氧化石墨烯提高多孔膜的力学性能,同时研究了氧化石墨烯对聚酰亚胺薄膜介电性能的影响。采用六种不同的方法合成了聚酰胺酸,测量产物的分子量,确定了合成聚酰胺酸的最佳方法。分别采用热酰亚胺化、催化酰亚胺化和化学酰亚胺化三种方法进行酰亚胺化反应,探究了合成聚酰亚胺的条件,发现加入叔胺作为催化剂,可显著降低聚酰胺酸的热酰亚胺化温度,以醋酸酐为脱水剂,三乙胺为催化剂,可以实现聚酰胺酸的完全酰亚胺化。制备了单分散的二氧化硅微球,以此为填料,采用原位聚合法制备了复合膜,分析了微球表面修饰对复合膜拉伸性能和介电性能的影响。在氢氟酸中对复合膜内的二氧化硅进行刻蚀,得到多孔膜,表征了多孔膜的力学性能和介电性能,随着孔隙率的增加,多孔膜的拉伸强度降低,介电常数呈线性降低。参考改进的Hummers法制备氧化石墨烯,氧化石墨烯可在水相中均匀稳定分散。采用原位聚合法制备氧化石墨烯/聚酰亚胺复合膜,分析了氧化石墨烯表面改性对复合膜拉伸性能和介电性能的影响。同时制备了含有氧化石墨烯的多孔复合膜,当孔隙率为8.6%,氧化石墨烯含量为1wt%时,多孔复合膜的介电常数为2.01。
[Abstract]:With the development of chip manufacturing technology, there is a demand for low dielectric constant insulation materials used as dielectric between connected conductors. Polyimide has a unique main chain structure that gives it excellent physical and chemical properties, including thermal stability, chemical stability, low dielectric properties and high insulation properties, making it a potential dielectric material. However, its dielectric constant can no longer meet the current needs. In this paper, porous polyimide films with different porosity were prepared by introducing stomatal method to reduce the dielectric constant of polyimide films. The mechanical properties of porous films were improved by composite graphene oxide, and the effect of graphene oxide on the dielectric properties of polyimide films was studied. Polyamide acid was synthesized by six different methods. The molecular weight of the product was measured and the best method for the synthesis of polyamide acid was determined. The conditions for the synthesis of polyimides were investigated by thermal imidization, catalytic imidization and chemical imidization, respectively. it was found that tertiary amines were added as catalysts. The thermal imidization temperature of polyamide acid can be significantly reduced. The complete imidization of polyamide acid can be realized by using acetic anhydride as dehydrating agent and triethylamine as catalyst. Monodisperse silica microspheres were prepared and used as fillers to prepare composite films by in situ polymerization. The effect of surface modification of microspheres on the tensile and dielectric properties of the composite films was analyzed. Silica in the composite film was etched in hydrofluoric acid, and the porous film was obtained. The mechanical and dielectric properties of the porous film were characterized. With the increase of porosity, the tensile strength of the porous film decreased and the dielectric constant decreased linearly. Graphene oxide was prepared by improved Hummers method. Graphene oxide can be uniformly and stably dispersed in aqueous phase. Graphene oxide / polyimide composite film was prepared by in situ polymerization. The effect of surface modification of graphene oxide on the tensile and dielectric properties of the composite film was analyzed. At the same time, a porous composite film containing graphene oxide was prepared. when the porosity was 8.6% and the content of graphene oxide was 1wt%, the dielectric constant of the porous composite film was 2.01.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2

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