基于SiC MOSFET的三相桥式PWM整流器高频化设计及研究

发布时间：2018-01-02 04:33

本文关键词：基于SiC MOSFET的三相桥式PWM整流器高频化设计及研究　出处：《南京航空航天大学》2016年硕士论文　论文类型：学位论文

【摘要】：三相电压源型桥式PWM整流器由于其交流侧功率因数高、谐波含量少等优点,广泛应用于各种工业、航空航天等场合。近年来出现的SiC MOSFET功率器件具有阻断电压高、导通电压低、开关损耗低、耐高温工作等特点,对整流器效率的提升以及高功率密度都有重要意义。并且随着SiC器件生产工艺的不断发展与成熟,SiC器件会在越来越多的领域受到关注。合适的驱动电路是正确使用功率器件的前提。与一般的Si功率器件相比,SiC MOSFET对驱动电路的要求特殊,用于高速开关的场合易出现误触发或栅极击穿现象。本文针对一款1200V/120A的SiC MOSFET,根据其开关特性以及应用特点,在电路结构、电阻选取、驱动电压和可靠性等方面综合考虑,设计了SiC MOSFET驱动电路。并采用双脉冲测试电路,分析了不同驱动电阻对SiC MOSFET开关过程的影响,为选择合适的驱动电阻提供了依据。将SiC MOSFET应用于三相桥式PWM整流器,并对数字控制系统进行设计。为了提高系统的开关频率,一方面对程序中的SVPWM算法进行了简化,另一方面设计了在自然坐标系下的电流内环和电压外环的控制参数,分析比较了P调节器和PI调节器下的电流内环,选择了P调节器作为电流内环的控制器,分析了电感感值、开关频率和电流环比例系数对交流侧电流稳态误差、动态性能的影响。建立了三相桥式PWM整流器的损耗模型,包括功率器件的导通损耗、开关损耗和滤波电感损耗,给出了计算方法和计算公式,对相同功率等级的SiC MOSFET和Si IGBT在不同开关频率下的损耗和系统效率进行对比分析。最后设计完成了全数字控制的5kW三相桥式PWM整流器原理样机,介绍了硬件和软件的设计,并以此样机为平台进行了实验,实验结果与理论和仿真分析相吻合,有效地验证了分析的正确性。
[Abstract]:Three-phase voltage source type PWM rectifier AC side power factor due to its advantages of high harmonic content, widely used in various industrial, aerospace and other fields. SiC MOSFET power devices in recent years has a high blocking voltage, low turn-on voltage, low switching loss, high temperature resistance etc., are of great significance to improve the efficiency of the rectifier and high power density. With the continuous development and production process of SiC devices and SiC devices will mature, more and more attention in the field. The drive circuit is the correct use of appropriate power devices provided. Compared with the Si device, SiC MOSFET requirements of the drive circuit for special. High speed switching applications prone to false triggering or gate breakdown phenomenon. The SiC MOSFET for a 1200V/120A, according to the switching characteristics and application characteristics, in circuit structure, resistance selection, The driving voltage and the reliability of the consideration of the design of SiC driving circuit of MOSFET. And by the double pulse circuit, analyzes the different driving resistance effect on process of SiC MOSFET switch, the driving resistance for the selection of appropriate to provide a basis for. SiC MOSFET is applied to the three-phase bridge type PWM rectifier, and the design of the digital control system in order to improve the switching frequency of the system, a simplified SVPWM algorithm for the program, on the other hand, the control parameters of current loop and voltage in natural coordinates of the outer ring, analysis and comparison of the P regulator and PI regulator for the current loop, the P controller as the controller the analysis of the current loop, the inductance, the switching frequency and current proportional to the AC side current steady-state error, influence the dynamic performance. A loss model of three-phase bridge rectifier PWM, including The power device conduction loss and switching loss and filter inductor loss, calculation method and calculation formula are given, and the system efficiency loss for the same power level of SiC MOSFET and Si IGBT in different switching frequencies were analyzed. Finally the design of full digital control 5kW three-phase bridge rectifier PWM principle prototype was completed, introduced. The design of hardware and software, and this prototype experiments were carried out, the experimental results were in good agreement with the theoretical analysis and simulation, to verify the correctness of the analysis.

【学位授予单位】：南京航空航天大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TM461

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