半导体P-N型温差发电器件热电性能研究

发布时间：2018-01-11 11:14

本文关键词：半导体P-N型温差发电器件热电性能研究　出处：《功能材料》2016年12期 　论文类型：期刊论文

【摘要】：区熔法工艺制备的Ti2Be3温差发电材料,以PN结为研究对象。通过有限体积法对单对半导体PN结模型的温度、流场进行模拟,并用热阻分析法对传热过程进行计算,考虑热电转换过程受PN结空腔内气体对流、热传导和辐射的影响。研究结果表明,数值模拟和热阻分析法所得结果吻合,芯片传热过程中陶瓷基板热阻耗散46%的温差,且当热端温度达1 000K时,辐射传热量占总传热量的37%;因此对半导体PN结模型进行优化,适当降低陶瓷基底热阻有利于提高半导体PN结实际温差和应用价值。
[Abstract]:Ti2Be3 thermoelectric materials prepared by zone melting method, the PN junction as the research object. By the finite volume method of single semiconductor pn junction temperature model, flow field simulation, and the method to calculate the heat transfer process with thermal resistance analysis, considering the thermoelectric conversion process by gas convection junction cavity, heat conduction and radiation effects. The results show that the numerical simulation results obtained and the thermal resistance analysis, temperature difference in the heat transfer process of ceramic chip substrate thermal dissipation 46%, and when the hot end temperature of 1 000K, radiation heat transfer of total heat transfer 37%; therefore to optimize the semiconductor PN model, appropriate to reduce the thermal resistance of ceramic substrate is conducive to the improvement of semiconductor the actual temperature of PN junction and application value.

【作者单位】：广东工业大学材料与能源学院;
【基金】：国家自然科学基金资助项目(51306040) 广东省科技计划资助项目(2014A010106027)
【分类号】：TM913
【正文快照】： 0引言由于热电发电过程中具有体积小、无噪声、寿命长等特点,其性能研究及相关应用备受关注[1]。国内外学者现集中于热电材料优值系数的提高[2-3];主要包括通过态密度共振和能带简并提高塞贝克系数;纳米结构等方法降低晶格热导率以及基体和纳米第二相的能带对齐来维持电传输性

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