多层瓷介电容器长期贮存寿命可靠性研究
本文关键词:多层瓷介电容器长期贮存寿命可靠性研究 出处:《哈尔滨工业大学》2016年硕士论文 论文类型:学位论文
更多相关文章: 多层瓷介电容器 长期贮存 贮存寿命 加速退化试验 线性回归模型
【摘要】:本文分析了多层瓷介电容器的结构、工艺、材料,对多层瓷介电容器在应用中的可靠性隐患进行了深入研究,针对多层瓷介电容器的薄弱环节制定了改进措施,改进后的多层瓷介电容器属于高可靠产品,只存在与温度相关的退化失效模式。本文研究制定了高可靠多层瓷介电容器适用的基于伪失效阈值的加速退化寿命试验方法,利用较短时间的常温贮存数据确定伪失效阈值,对退化数据运用线性退化模型进行分析处理,得到了给定伪失效阈值条件下的伪失效寿命预计结果。为验证预计结果的准确性,采用了威布尔分布的数据统计方法和灰色系统理论模型GM(1,1)分别对加速退化数据和常温贮存数据进行了分析,结果表明本文提出的基于伪失效阈值的加速退化试验方法的寿命预计结果与上述两种方法一致,因此利用基于伪失效阈值的加速贮存退化试验方法评价高可靠多层瓷介电容器的寿命是有效的、可行的。采用基于伪失效阈值的加速退化试验方法可以获取有限寿命范围内的参数退化情况,与通常基于失效统计的加速贮存寿命试验相比,能够缩短试验时间,成本更低,更适合工程应用。论文的主要内容包括以下几个方面:(1)针对多层瓷介电容器的结构特点,对结构的薄弱环节进行了分析,通过总结导致多层瓷介电容器失效的原因,提出了工艺过程中的改进措施,对多层瓷介电容器进行贮存寿命评价的先决条件为多层瓷介电容器已经消除了潜在失效模式,即多层瓷介电容器应为高可靠产品。(2)根据高可靠产品失效率低的特点,研究制定了基于阿伦尼斯模型的加速退化试验方法,利用常温贮存数据确定了伪失效阈值,对加速退化试验数据进行线性回归处理,得到在给定伪失效阈值的条件下的伪失效寿命预计结果。(3)通过建立反推关系模型,验证了高温试验数据的准确性。采用威布尔寿命分布、灰色系统理论模型分别对高温加速数据和常温贮存数据进行分析,得到的寿命预计结果均与本文提出的基于伪失效阈值的加速退化试验方法相一致。
[Abstract]:In this paper, the structure, process and material of multilayer ceramic capacitor are analyzed, and the hidden trouble of reliability in the application of multilayer ceramic capacitor is deeply studied, and the improvement measures are made for the weak link of multilayer ceramic dielectric capacitor. The improved multilayer ceramic dielectric capacitor belongs to a high reliability product. There are only degradation failure modes related to temperature. In this paper, an accelerated degradation life test method based on pseudo failure threshold for high reliability multilayer ceramic dielectric capacitors is developed. The pseudo failure threshold is determined by using the data stored at room temperature for a short time, and the degradation data is analyzed and processed by linear degradation model. The prediction results of pseudo-failure life under the given pseudo-failure threshold are obtained. In order to verify the accuracy of the predicted results, the Weibull distribution data statistics method and the grey system theory model GM(1 are adopted. 1) the accelerated degradation data and the storage data at room temperature are analyzed respectively. The results show that the life prediction results of the proposed accelerated degradation test method based on pseudo-failure threshold are consistent with those of the above two methods. Therefore, it is effective to use the accelerated storage degradation test method based on pseudo failure threshold to evaluate the life of high reliability multilayer ceramic dielectric capacitor. It is feasible to use the accelerated degradation test method based on pseudo failure threshold to obtain the parameter degradation in the limited life range, compared with the accelerated storage life test based on failure statistics. It can shorten the test time, lower cost, more suitable for engineering application. The main contents of this paper include the following aspects: 1) in view of the structural characteristics of multilayer ceramic dielectric capacitor, the weak links of the structure are analyzed. Through summing up the causes of the failure of the multilayer ceramic dielectric capacitor, the improvement measures in the process are put forward. The prerequisite for evaluating the storage life of multilayer ceramic dielectric capacitors is that the potential failure modes have been eliminated. That is, the multilayer ceramic dielectric capacitor should be a high reliability product. (2) according to the characteristics of low failure rate of high reliability products, the accelerated degradation test method based on Arrhenis model was developed. The pseudo failure threshold was determined by using the stored data at room temperature, and the accelerated degradation test data were treated by linear regression. The prediction results of pseudo-failure life under the condition of given pseudo-failure threshold are obtained. The accuracy of high-temperature test data is verified by establishing a model of backstepping relationship. Weibull life distribution is adopted. The theoretical model of grey system is used to analyze the accelerated data at high temperature and storage data at room temperature, and the results of life prediction are in agreement with the accelerated degradation test method based on pseudo-failure threshold proposed in this paper.
【学位授予单位】:哈尔滨工业大学
【学位级别】:硕士
【学位授予年份】:2016
【分类号】:TM53
【相似文献】
相关期刊论文 前10条
1 康亭;;修复高压瓷介电容[J];机械工人技术资料;1973年09期
2 傅成君;国外独石瓷介电容器的可靠性[J];电子元件与材料;1982年01期
3 钟建薇,梁力平;多层片式瓷介电容器贱金属电极的制造方法[J];电子元件与材料;2004年12期
4 杜红炎;唐欣;冯建琼;孙淑英;;10℃法则与多层瓷介电容器的贮存寿命试验[J];电子产品可靠性与环境试验;2011年04期
5 吴霞宛,王元欣;独石瓷介电容器低电平失效的机理[J];电子元件与材料;1984年05期
6 王元欣;非破坏性筛选低压失效独石瓷介电容器的方法[J];电子元件与材料;1986年01期
7 张海明;试论中国多层瓷介电容器工业发展方向──一位美籍华裔工程师的建议[J];电子元件与材料;1994年03期
8 金德;多层瓷介电容器专利题录[J];广东科技;1997年01期
9 ;中高压交流瓷介电容器装配线[J];科技资讯;2004年01期
10 刘宁馨;新生产技术对我国低温烧结多层瓷介电容器发展的影响[J];电子元件与材料;1989年06期
相关会议论文 前4条
1 赵宇萍;魏建中;;宇航级瓷介电容器极限寿命研究[A];2010第十五届可靠性学术年会论文集[C];2010年
2 李正玲;;园片瓷介电容器用选择成型镍代银电极的研究[A];94'全国结构陶瓷、功能陶瓷、金属/陶瓷封接学术会议论文集[C];1994年
3 赵志平;赵俊伟;;瓷介电容器的焊接性能研究[A];全国第六届SMT/SMD学术研讨会论文集[C];2001年
4 罗世勇;赵俊斌;章士瀛;;CCF片式塑封型交流瓷介电容器的研制[A];中国电子学会第十五届电子元件学术年会论文集[C];2008年
相关重要报纸文章 前3条
1 中电;福建火炬多层瓷介电容器通过验收[N];福建工商时报;2010年
2 萧马;瓷介电容器业领跑[N];中国电子报;2004年
3 湖北 曾安君;彩电中周失谐故障的彻底修复[N];电子报;2008年
相关硕士学位论文 前4条
1 彭磊;多层瓷介电容器长期贮存寿命可靠性研究[D];哈尔滨工业大学;2016年
2 李军;射频微波多层瓷介电容器的研制[D];电子科技大学;2011年
3 陈子根;贴片瓷介电容微器件装配联动机控制系统的研究与实现[D];电子科技大学;2009年
4 王宗伟;CCH片式高压瓷介电容器装配自动化设计研究[D];电子科技大学;2005年
,本文编号:1436570
本文链接:https://www.wllwen.com/kejilunwen/dianlidianqilunwen/1436570.html