高阻单晶硅太阳电池关键工艺研究

发布时间：2018-01-17 22:33

  本文关键词：高阻单晶硅太阳电池关键工艺研究　出处：《渤海大学》2017年硕士论文　论文类型：学位论文

  更多相关文章： 太阳电池 电阻率 方块电阻 扩散 效率

【摘要】：作为解决世界能源危机的一个可行的方法,太阳电池的开发成为世界各国广泛研究的前沿课题。近年来,光伏产业发展迅速,已出现多种形式的太阳电池,但实用化的太阳电池仍以晶硅太阳电池为主。太阳电池的研究与开发始终围绕着提高光电转换效率和降低成本两个关键问题展开,而现在,这两个问题还是没有得到全面的解决。本文围绕这两个问题展开对单晶硅电池的研究。单晶硅在制备过程中产生大量的较高电阻率硅片,极少量低阻硅片和超高阻硅片,这无形中增加了制造成本,即这些高阻硅片并不适应现今太阳电池的制备工艺,无法做出理想电池,所以在生产中这些硅片需要回炉重新制备。本论文针对高阻硅片制备太阳电池极其性能展开课题研究,主要探究方块电阻的大小对太阳电池的影响,通过控制工艺条件影响方阻阻值,在高阻电池制备实验中摸索条件,找到较好效率的高阻电池制备工艺条件,以期使高阻电池效率得到改善,并提高高阻硅片的利用率,从而降低单晶硅电池的生产成本。本文首先研究常规太阳电池的工艺条件,再探究不同电阻率硅片制备太阳电池的可行性,得出用电阻率为3-6?·cm这范围的硅片可以尝试不同工艺条件制备太阳电池,而其也是除常规硅片外占比最大的一部分;接着结合方阻与硅电阻率的关系,方阻与扩散参数及方阻与电性能参数的关系这几方面,来探究高电阻率太阳电池的工艺,主要研究工艺为制绒工艺,扩散工艺及烧结工艺。通过大量实验对比分析,得到扩散工艺参数主要降低通源量及扩散温度,小氮流量1800sccm降至1350sccm,扩散温度由850℃降至818℃,烧结工艺参数主要控制温度,由780℃降至760℃,制备出高阻太阳电池,通过测试各项电性参数及分析对比,发现方块电阻在75?至80?这一范围时电池性能较好。研究基本解决高阻电池的制备问题,但由于条件有限,还有很多不足之处,需要继续改进,希望可以对单晶硅电池效率的提高及成本的降低提供参考。
[Abstract]:As a feasible method to solve the world energy crisis, the development of solar cells has become a leading topic in the world. In recent years, photovoltaic industry has developed rapidly, and many kinds of solar cells have emerged. However, the practical solar cells are still mainly crystalline silicon solar cells. The research and development of solar cells have always focused on two key issues: improving the photoelectric conversion efficiency and reducing the cost, but now. These two problems have not been completely solved. This paper focuses on the study of monocrystalline silicon cells. Monocrystalline silicon produces a large number of high resistivity silicon wafers during the preparation process. A very small number of low resistance silicon wafers and ultra-high resistance silicon wafers, which invisibly increase the cost of manufacturing, that is, these high resistance silicon wafers do not adapt to the current preparation process of solar cells, can not make ideal cells. Therefore in the production of these wafers need to be reprepared. This thesis focuses on the preparation of high resistance silicon wafer solar cells and its performance research mainly explore the impact of square resistance on the solar cells. In order to improve the efficiency of high resistance battery, we can find out the preparation conditions of high resistance battery with better efficiency by controlling the influence of process conditions on square resistance resistance. And improve the utilization rate of high resistance silicon wafer, so as to reduce the production cost of single crystal silicon battery. Firstly, this paper studies the process conditions of conventional solar cells, and then explores the feasibility of preparing solar cells with different resistivity silicon wafers. The resistivity is 3-6? 路cm silicon wafer can be used to prepare solar cells under different technological conditions, and it is also the largest proportion of solar cells except conventional silicon wafers. Then combining the relation of square resistance and silicon resistivity, square resistance and diffusion parameter and the relation between square resistance and electrical property parameter, to explore the technology of high resistivity solar cell, the main research process is cashmere making technology. Diffusion process and sintering process. Through a large number of experiments and comparative analysis, the diffusion process parameters mainly reduce the amount of source and diffusion temperature, small nitrogen flow rate of 1800SCcm to 1350sccm. The diffusion temperature was reduced from 850 鈩，

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