基于SiC MOSFET的高性能逆变器的研究

发布时间：2018-01-26 03:28

本文关键词： 碳化硅MOSFET LC滤波器三相逆变器损耗分析正弦脉宽调制　出处：《东北电力大学》2016年硕士论文　论文类型：学位论文

【摘要】：随着高压直流输电的诞生与发展,电力电子技术尤其是各种换流技术也随之进步,人们越来越关注变换器的功率密度与效率等方面的特性。但是目前而言,电力系统的能耗有很大一部分是损失在电力换流之后,为了应对能源紧张的现状,降低能耗已经成为发展所迫切需求的,于是半导体开关元件的开发与选用显得愈发的关键。新型碳化硅(Silicon Carbide,SiC)金氧半场效晶体管(metal-oxide-semiconductor field-effect transistor,MOSFET)相比于硅基功率开关器件(Silicon,Si),具有开关及导通损耗小、高频开关和耐高温等特性,将在高性能功率变换器中得到快速发展。本文针对SiC MOSFET进行了着重的研究,分析了SiC器件的参数以及物理特性和电特性,并深入的对基于SiC-MOSFET的三相逆变器开展研究,首先根据正弦脉宽调制(Sinusoidal Pulse Width Modulation,SPWM)下开关频率及电流波纹的大小来优化设计高频LC滤波器,同时通过效率分析和热等效电路来选取散热器。其次对比分析正弦脉宽调制、空间矢量脉宽调制(Space vector pulse width modulation,SVPWM)、不连续空间矢量脉宽调制(Dscontinuous space vector pulse width modulation,DSVPWM)三种调制方式下和不同开关频率下的SiC-MOSFET逆变器波形仿真与效率特性。最后,通过搭建并测试125kVA三相SiC-MOSFET逆变器实验装置来验证不同负载条件下设计合理性和SiC-MOSFET逆变器优越性。
[Abstract]:With the birth and development of HVDC transmission, power electronics technology, especially all kinds of commutation technology, is also progressing. People pay more and more attention to the characteristics of converter power density and efficiency. A large part of the energy consumption of the power system is lost. In order to deal with the current situation of energy shortage, reducing the energy consumption has become an urgent need for development. As a result, the development and selection of semiconductor switch components are becoming more and more critical. Silicon Carbide is a new type of silicon carbide. Sic) metal-oxide-semiconductor field-effect transistor. Compared with silicon based power switch devices, MOSFETs have the characteristics of low switching and on-on loss, high frequency switching and high temperature resistance. It will be developed rapidly in high performance power converters. This paper focuses on the study of SiC MOSFET, and analyzes the parameters, physical and electrical characteristics of SiC devices. And in-depth research on three-phase inverter based on SiC-MOSFET. Firstly, sinusoidal Pulse Width Modulation is modulated according to sinusoidal pulse width. SPWM) switch frequency and current ripple size to optimize the design of high-frequency LC filter, at the same time through efficiency analysis and thermal equivalent circuit to select the radiator. Secondly, the sinusoidal pulse width modulation is analyzed. Space vector pulse width modulation (SVPWM). Discontinuous space vector pulse width modulation (Dscontinuous space vector pulse width modulation). SiC-MOSFET inverter waveform simulation and efficiency characteristics under three modulation modes and different switching frequency. Finally. An experimental device of 125kVA three-phase SiC-MOSFET inverter is built and tested to verify the rationality of the design and the superiority of the SiC-MOSFET inverter under different load conditions.
【学位授予单位】：东北电力大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TM464

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