不同背场的GaAs基单结太阳能电池伏安特性及分析

发布时间：2018-02-17 08:59

本文关键词： 光学器件太阳能电池砷化镓背场　出处：《光学学报》2017年02期 　论文类型：期刊论文

【摘要】：介绍了GaAs基太阳能电池的原理、等效电路及性能参数,基于集成电路工艺与器件计算机辅助工艺设计(TCAD)仿真工具,设计了背场分别为InAlGaP和InAlP的两种GaAs基太阳能电池,并对其结构和性能进行仿真。同时,通过分子束外延(MBE)设备制备了这两种太阳能电池,并测试了其伏安(IV)特性。在考虑并联电阻和串联电阻对太阳能电池伏安特性的实际影响后,仿真结果与实验结果基本一致。重掺杂(原子浓度为2×1018 cm-3)的InAlGaP作为GaAs太阳能电池背场时,伏安特性曲线是典型的太阳能电池的伏安特性。重掺杂(原子浓度为2×1018 cm-3)的InAlP作为GaAs太阳能电池背场时,伏安特性曲线呈现"S"形变化。分析结果表明,背场与基层形成漂移场,加速了光生少子在电池中的输运,提高了光生电流,同时,背场将光生少子反射回有源区,降低了背表面的复合概率。当InAlP作为背场时,由于异质结的存在,影响了载流子的运输,在较小的偏压下,载流子主要通过隧道效应越过势垒,在较大的偏压下,载流子主要通过热电子发射越过势垒,因此伏安特性曲线呈现"S"形变化。
[Abstract]:The principle, equivalent circuit and performance parameters of GaAs based solar cells are introduced. Based on the simulation tools of integrated circuit and device computer aided process planning, two kinds of GaAs based solar cells with backfield of InAlGaP and InAlP are designed. At the same time, the two kinds of solar cells were fabricated by MBE equipment. After considering the effect of shunt resistance and series resistance on the volt-ampere characteristics of solar cells, The simulation results are in good agreement with the experimental results. When heavily doped (2 脳 10 ~ (18) cm ~ (-3)) InAlGaP is used as the backfield of GaAs solar cells, The volt-ampere characteristic curve is a typical volt-ampere characteristic of solar cells. When heavily doped (atomic concentration 2 脳 1018 cm-3) InAlP is used as the backfield of GaAs solar cells, the volt-ampere characteristic curve shows a "S" shape change. The analysis results show that the drift field is formed between the backfield and the base. The photoinduced minority carrier transport in the battery is accelerated, and the photogenerated current is increased. At the same time, the back field reflects the photogenerated minority carrier back to the active region, thus reducing the recombination probability of the back surface. When InAlP is used as the backfield, the heterojunction exists. The carrier transport is affected. At a small bias, the carrier crosses the barrier mainly through the tunneling effect. At the larger bias, the carrier mainly crosses the barrier by hot electron emission, so the volt-ampere characteristic curve shows a "S" shape change.
【作者单位】：南通大学江苏省专用集成电路设计重点实验室;中国科学院苏州纳米技术与纳米仿生研究所;
【基金】：国家自然科学基金(61474067,61176128,61376091,61534008) 交通运输部科技计划(2013319813100)
【分类号】：TM914.4

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