用于精确预测SiC MOSFET开关特性的分析模型

发布时间：2018-03-19 15:51

本文选题：分析模型　切入点：碳化硅MOSFET　出处：《电工技术学报》2017年01期 　论文类型：期刊论文

【摘要】：为精确估算高频工作状态下SiC MOSFET的开关损耗及分析寄生参数对其开关特性的影响,提出了一种基于SiC MOSFET的精准分析模型。该模型考虑了寄生电感、SiC MOSFET非线性结电容及非线性跨导系数等参数。详细介绍了建立分析模型的原理,并给出了分析模型中各关键参数的提取方法。对比了基于分析模型计算得到的开关波形与实验测试结果,对比电压电流波形匹配度较高,证明了此分析模型的正确性。对比了分析模型的开关损耗与基于实验计算的开关损耗,对比结果显示两者存在偏差,而分析表明基于实验计算开关损耗的方法为不准确方法。最后基于所提出的分析模型分析了不同寄生参数对开关特性的影响,并为优化高频电路设计提出了建议。
[Abstract]:In order to estimate the switching loss of SiC MOSFET at high frequency and analyze the influence of parasitic parameters on its switching characteristics, A precise analytical model based on SiC MOSFET is proposed, which takes into account the parameters of nonlinear capacitance and nonlinear transconductance of parasitic inductor sic MOSFET. The principle of establishing an analytical model is introduced in detail. The method of extracting the key parameters in the analysis model is given. The comparison between the switching waveform calculated by the analysis model and the experimental test results shows that the matching degree of the voltage and current waveform is higher than that of the analysis model. The correctness of the analysis model is proved. The switching loss of the analysis model is compared with the switching loss based on the experimental calculation. The comparison results show that there is a deviation between the two models. The analysis shows that the method of calculating switching loss based on experiments is inaccurate. Finally, based on the proposed analysis model, the influence of different parasitic parameters on switching characteristics is analyzed, and some suggestions for optimizing the design of high frequency circuits are put forward.
【作者单位】：北京交通大学电气工程学院;
【分类号】：TM46;TN386

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