太阳电池电势诱导衰减效应表面复合速度机理

发布时间：2018-03-29 02:17

本文选题：模型　切入点：波长　出处：《农业工程学报》2017年18期

【摘要】：电势诱导衰减(potential induced degradation,PID)效应是导致光伏组件输出效率下降的主要原因之一。为了研究PID太阳电池前表面非平衡载流子复合特性,该论文首先分析PID太阳电池表面能带及电场变化情况,利用连续性方程以及电流密度方程建立PID太阳电池表面复合速度S_(pPID)与短波内量子效率(internal quantum efficiency,IQE(λ))之间的数学模型。其次,通过利用太阳电池常用计算模拟软件PC1D模拟在不同工艺条件下晶体硅太阳电池IQE(λ),并且采用所构建的数学模型计算PID效应太阳电池前表面复合速度S_(pPID),与未发生PID效应时前表面复合速度S_p以及I-V特性曲线进行对比。结果表明,利用短波IQE(λ)测量PID太阳电池前表面复合速度S_(pPID)时,波长选择范围在310~360 nm之间误差较小;当太阳电池发生PID效应,前表面复合速度增大,前表面杂质浓度低、钝化效果好的太阳电池输出I-V特性下降,对钝化效果差、表面掺杂浓度高的太阳电池输出I-V特性影响较小。论文的研究结果为制备抗PID效应组件提供理论基础。
[Abstract]:The potential attenuated potential (induced) effect is one of the main reasons for the decrease of the output efficiency of photovoltaic modules. In order to study the nonequilibrium carrier recombination characteristics of the front surface of PID solar cells, the potential attenuation potential (induced) effect is one of the main reasons for the decrease of output efficiency of photovoltaic modules. In this paper, the surface energy band and electric field change of PID solar cell are analyzed, and the mathematical model between PID solar cell surface recombination velocity and internal quantum efficiency iQE (位) is established by using continuity equation and current density equation. In this paper, we simulate the crystal silicon solar cell IQE (位 _ (位)) under different technological conditions by using the solar cell simulation software PC1D, and use the mathematical model constructed to calculate the PID effect solar cell's front surface compound velocity, and compare with the PID effect of the crystal silicon solar cell. The surface recombination velocities (SSP) and I-V characteristic curves are compared. The results show that, When using short-wave IQE (位) to measure the composite velocity of front surface of PID solar cell, the wavelength selection range is 310 ~ 360nm and the error is small. When the PID effect occurs in the solar cell, the recombination velocity of the front surface increases and the concentration of impurity on the front surface is low. The output I-V characteristics of solar cells with good passivation effect are decreased, and the I-V characteristics of solar cells with high surface doping concentration and poor passivation effect are decreased. The results of this paper provide a theoretical basis for the fabrication of anti-#en0# effect modules.
【作者单位】：云南师范大学太阳能研究所;
【基金】：云南省科技计划面上项目“光伏组件PID效应与热斑效应机理研究”(2017FB089)
【分类号】：TM914.4

【相似文献】