新型抗PID单晶硅太阳电池减反射薄膜工艺研究

发布时间：2018-04-05 04:39

本文选题：单晶硅太阳电池　切入点：PC1D软件　出处：《内蒙古大学》2017年硕士论文

【摘要】：本文在常规太阳电池生产减反膜工序中引入笑气(N20),用等离子增强化学气相沉积法(PECVD)在单晶硅电池表面淀积四层薄膜作为减反射膜,生产具有抗电位诱导衰减(PID)效应的单晶硅太阳电池。研究了 PECVD设备不同工艺参数对薄膜的影响,并对所成薄膜和电池片进行了测试分析。用PC1D软件模拟电池减反射层,在模拟得到的电参数中选出几组理想膜厚和折射率组合。根据模拟结果,在新型笑气工艺下利用PECVD设备淀积四层薄膜,经过多次实验分析和不断调整工艺,确定沉积减反射层的优化工艺参数。首先在单晶硅片表面沉积一层厚度足够薄、致密性足够好的氧化硅层,用来阻止玻璃中的Na+进入电池表面,同时起到表面钝化的作用。之后沉积氮化硅与氮氧化硅层作为折射率缓冲层,减少膜间高折射率差引起的高消光系数,降低膜间的反射。最后沉积折射率较低的氧化硅层,使薄膜整体达到设计要求,并与电池封装材料EVA相匹配。用椭偏仪测试薄膜的厚度和折射率,第一层氧化硅膜厚度10nm,折射率2.4;第二层氮化硅膜厚40nm,折射率2.32;第三层氮氧化硅膜厚25nm,折射率1.98;第四层氧化硅膜厚36nm,折射率1.57。最终,电池表面呈深蓝色,成膜均匀无色差。因存在膜间的扩散等因素,减反射层整体厚度74.9,折射率2.16。反射率测试表明,镀膜后电池平均反射率在5%以下,最低在入射光波长570nm处降低至0.3%,明显降低了光在电池表面的反射,增加了光的利用率。EDS测试给出:电池内Si:N:0=5.35:1.52:1,硅含量较高。生产出的单晶硅电池(156.75mm×156.75mm)各项参数较好,平均短路电流9.428A,平均光电转化效率19.81%。
[Abstract]:In this paper, nitrous oxide (N20) was introduced into conventional solar cells to produce antireflection films. Four layers of thin films were deposited on the surface of monocrystalline silicon cells by plasma enhanced chemical vapor deposition (PECVD) as antireflection films.Monocrystalline silicon solar cells with PID-resistant potential induced attenuation effect are produced.The influence of different process parameters of PECVD equipment on the film was studied, and the film and battery chip were tested and analyzed.The antireflective layer of the battery is simulated by PC1D software, and several groups of ideal film thickness and refractive index combination are selected from the electrical parameters obtained from the simulation.According to the simulation results, four layers of thin films were deposited by PECVD equipment under the new process of nitrous oxide. After many experiments and continuous adjustment of the process, the optimum process parameters of the deposition antireflection layer were determined.First, a layer of silicon oxide is deposited on the surface of the single crystal silicon wafer, which is thin enough and compact enough to prevent Na from entering the surface of the cell and play the role of surface passivation.Then silicon nitride and silicon oxide layer are deposited as refractive index buffer layer to reduce the high extinction coefficient caused by high refractive index difference between the films and to reduce the reflection between the films.Finally, the silicon oxide layer with low refractive index is deposited, which makes the film meet the design requirements and matches the battery packaging material EVA.The thickness and refractive index of the film are measured by ellipsometer. The thickness of the first layer is 10 nm, the refractive index of the second layer is 2.4, the thickness of the second layer is 40 nm, the refractive index is 2.32, the thickness of the third layer is 25 nm, the refractive index is 1.98, the thickness of the fourth layer is 36 nm, the refractive index is 1.57.Finally, the surface of the battery is dark blue, and the film is uniform and colorless.The overall thickness of antireflection layer is 74.9 and the refractive index is 2.16 due to the existence of diffusion between films.The results of reflectivity test show that the average reflectivity of the cell is less than 5% after coating, and the lowest is at the incident wavelength 570nm, which decreases the reflection of light on the surface of the battery, and increases the utilization ratio of light. The results show that the Si: n: 0 5.355.152: 1: 1, and the silicon content is relatively high.The average short-circuit current is 9.428A and the average photoelectric conversion efficiency is 19.81mm. The parameters of the single crystal silicon battery produced are 156.75mm 脳 156.75mm), the average short-circuit current is 9.428A and the average photoelectric conversion efficiency is 19.81mm.
【学位授予单位】：内蒙古大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM914.41

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