碱金属掺杂铜铟镓硒薄膜太阳电池性能研究

发布时间：2018-04-10 06:30

本文选题：铜铟镓硒　切入点：柔性聚酰亚胺衬底　出处：《天津理工大学》2017年硕士论文

【摘要】：以聚酰亚胺(PI)为衬底的柔性铜铟镓硒(CIGS)薄膜太阳电池具备质量比功率高、可弯曲、轻质、适合卷对卷沉积规模化生产等特点,是当前研究的热点。目前瑞士联邦材料测试与开发研究所(Swiss Federal Laboratories for Materials Science and Technology,EMPA)在PI衬底上制备的小面积CIGS薄膜太阳电池的效率达到了20.4%。柔性衬底CIGS太阳电池不同于玻璃衬底电池,在制备过程中需要额外掺杂碱金属元素,如Na,K等。大量研究表明掺杂碱金属元素能够明显改善CIGS吸收层薄膜的结晶质量和电学性质,提高柔性CIGS薄膜太阳电池的开路电压和填充因子,从而制备出高转换效率太阳电池。本论文采用连续蒸发工艺制备CIGS吸收层,第一部分研究了不同的Na掺杂方式对柔性衬底CIGS吸收层薄膜的作用,着重研究了后掺Na和共蒸发掺Na,利用各种手段测量并研究其物理性质,确定了共蒸发掺Na的工艺流程,在改善CIGS吸收层的同时简化了吸收层沉积工艺,适合大规模工业化生产。第二部分中研究了K元素掺杂对CIGS吸收层薄膜作用。系统地研究了不同的K元素掺杂量、退火条件等对于CIGS薄膜表面结构及电学性质的影响,通过优化后掺K工艺修饰Cu(In,Ga)Se2薄膜表面,制备的柔性CIGS太阳电池转换效率达12.9%。
[Abstract]:The flexible copper indium gallium selenite (CIGS) thin film solar cells on polyimide (Pi) substrate have the characteristics of high specific power, flexible bending, light weight and suitable for the large-scale production of coiling deposition.At present, the efficiency of the small area CIGS thin film solar cells prepared on Pi substrate by Swiss Federal Laboratories for Materials Science and technology has reached 20.4%.CIGS solar cells on flexible substrates are different from those on glass substrates and need to be doped with alkali elements such as NaOK in the preparation process.A large number of studies have shown that doping alkali metal elements can obviously improve the crystalline quality and electrical properties of CIGS thin film solar cells, increase the open circuit voltage and filling factor of flexible CIGS thin film solar cells, and thus fabricate high conversion efficiency solar cells.In this thesis, CIGS absorption layer was prepared by continuous evaporation. In the first part, the effects of different Na doping methods on CIGS thin films on flexible substrates were studied.In this paper, the post-doped Na and co-evaporated Na are studied. The physical properties are measured and studied by various means. The technological process of co-evaporation and doping of Na is determined. The deposition process of the absorption layer is simplified while the absorption layer of CIGS is improved, which is suitable for large-scale industrial production.In the second part, the effect of K doping on CIGS thin films was studied.The effects of different K doping amount and annealing conditions on the surface structure and electrical properties of CIGS thin films were systematically studied. The conversion efficiency of the flexible CIGS solar cells prepared by the optimized K doping process was 12.9b.
【学位授予单位】：天津理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM914.42

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