硅-PEDOT:PSS杂化太阳能电池制备及光伏性能研究

发布时间：2018-04-19 15:40

本文选题：Si-PEDOT + PSS杂化电池　；参考：《电子科技大学》2017年博士论文

【摘要】：由于汲取了硅基与有机太阳能电池的优势,硅基有机杂化太阳能电池成为当前的一个研究热点。其中聚(3, 4-亚乙二氧基噻吩)-聚(苯乙烯磺酸)(PEDOT:PSS)具有良好的光透过性与空穴传输性,非常适宜用来与N型硅(Si) 一起构建Si-PEDOT:PSS杂化太阳能电池器件。业界研究聚焦于界面修饰、硅表面制绒、PEDOT:PSS改性、背接触改善、正面反型效应增强等方面,这一系列研究促使Si-PEDOT:PSS杂化太阳能电池迅速发展。在本文的研究中,以提升Si-PEDOT:PSS杂化太阳能电池的光电转化效率为目标,我们尝试了几项有效的技术手段,如将局部钝化层应用于Si-PEDOT:PSS杂化电池,通过降低背表面复合速率来提升开路电压(Voc),进而增加Si-PEDOT:PSS杂化太阳能电池器件光电转化效率;利用改良后的金属催化腐蚀法制备高效陷光纳米锥重构结构,进而提升短路电流密度(Jsc),以更适用于Si-PEDOT:PSS杂化电池;利用软件模拟建立了关于PEDOT:PSS与减反层的光学模型,更高效地制备高转化效率Si-PEDOT:PSS杂化电池。具体工作包括以下几方面:(1)为了高效地钝化N型Si衬底,降低太阳能器件背面少数载流子复合速率,我们利用等离子体增强化学气相沉积系统(PECVD)沉积氮化硅(SiNx:H)钝化膜,利用原子层沉积系统(ALD)沉积三氧化二铝(Al2O3)钝化膜,以少子寿命为主要表征方式对SiNx:H与Al2O3进行钝化性能测定。通过调节PECVD沉积过程中的源气流比例、衬底沉积温度、腔体沉积功率、SiNx:H薄膜厚度等工艺,得到表面复合速率约为30 cm/s的高钝化性能SiNx:H薄膜。通过调节ALD沉积过程中薄膜厚度、薄膜退火温度、退火时间等工艺,得到表面复合速率约为30 cm/s的高钝化性能Al2O3薄膜。经过工艺优化,SiNx:H与Al2O3薄膜均展现出良好的钝化性能,这方面关于高效钝化膜的细致研究,为后续将局部钝化技术应用于Si-PEDOT:PSS杂化电池的研究提供了有力支撑。(2)我们将SiNx:H与Al2O3钝化膜沉积在Si衬底的表面,通过光刻工艺局部保护SiNx:H与Al2O3薄膜,再利用HF酸腐蚀得到局部覆盖的SiNx:H与Al2O3钝化膜。经过少子寿命对比,腐蚀后的SiNx:H膜表现出更佳的钝化性能,将其应用于Si-PEDOT:PSS杂化太阳能电池,光电转化效率有0.6%的绝对提升。在增加钝化层之后开路电压(Voc)从0.523 V提升到0.557 V,从器件层面验证了局部SiNx:H钝化膜具有良好的钝化能力。在这部分研究工作中,我们对正面PEDOT:PSS钝化、背面SiNx:H钝化,以及它们的组合钝化效果进行了详细的表征和分析。(3)我们提出了一种更简单的金属催化腐蚀法,并利用该方法在硅表面制备新型纳米锥重构结构。该金属催化腐蚀法只需配制一份溶液就能同时达到Ag纳米颗粒沉积与表面腐蚀的效果。为制备纳米锥重构结构,我们通过两次处理的方式在纳米锥表面形成尺寸更小的纳米结构,在研究过程中通过对比不同浸泡时间来优化重构纳米锥的制备工艺,最终得到在全光谱都有光学响应提升的黑硅。将此黑硅应用于Si-PEDOT:PSS杂化电池后,制备得到光电转化效率达到11.75 %的太阳能电池器件,相对于参考器件,光电转化效率提升了 1.84 %。电池效率的提升主要归因于纳米锥重构结构能起到更强陷光作用以及能与PEDOT:PSS膜产生更多的接触面积。(4)因为氧化钼(MoO3)的折射率在2.1左右,所以非常适合用于Si-PEDOT:PSS杂化电池的减反层。我们利用软件建模来预测MoO3作为减反层时组件的各项光学参数及其损失电流。结合实验结果,论证了本理论模型的准确性。通过沉积34 nm的MoO3减反层以及增加N+背场层,杂化电池在可见波段与长波段展现出更好的光学响应,短路电流Jsc提升到28.7 mA/cm2。相应电池光电转化效率为11.90 %,较参考电池(9.23%)有大幅度的提升。
[Abstract]:Due to the advantages of silicon based and organic solar cells, silicon based organic hybrid solar cells have become a hot spot of research. The polymer (3, 4-, two oxy thiophene) - poly (PEDOT:PSS) has good light transmittance and hole transmission, which is very suitable for the construction of Si-PEDOT:PSS mixed with N type silicon (Si). The industry research focuses on interface modification, silicon surface cashmere, PEDOT:PSS modification, back contact improvement, positive reaction enhancement, and so on. This series of research promotes the rapid development of Si-PEDOT:PSS hybrid solar cells. In this study, the photoelectric conversion efficiency of Si-PEDOT:PSS hybrid solar cells is improved. We have tried several effective techniques, such as applying the local passivation layer to the Si-PEDOT:PSS hybrid battery, improving the open circuit voltage (Voc) by reducing the back surface recombination rate and increasing the photoelectric conversion efficiency of the Si-PEDOT:PSS hybrid solar cell devices, and using the improved metal catalytic corrosion method to prepare the high efficient trapping nanometer. The cone reconfiguration structure, which further improves the short circuit current density (Jsc), is more suitable for Si-PEDOT:PSS hybrid batteries. The optical model about PEDOT:PSS and the antireflective layer is established by software simulation, and the high conversion efficiency Si-PEDOT:PSS hybrid battery is prepared more efficiently. The specific work includes the following aspects: (1) in order to passivate the N Si substrate efficiently, A few carrier recombination rates on the back of the solar energy device, we use the plasma enhanced chemical vapor deposition system (PECVD) to deposit the passivation film of the silicon nitride (SiNx:H), and use the atomic layer deposition system (ALD) to deposit three oxidation two aluminum (Al2O3) passivation film. The passivation performance of SiNx:H and Al2O3 is determined by the lifetime of the minority. A high passivation performance SiNx:H film with a surface composite rate of about 30 cm/s was obtained by adjusting the ratio of source flow, substrate deposition temperature, cavity deposition power and thickness of SiNx:H film during PECVD deposition. The surface recombination rate was about 30 cm/ by adjusting the thickness of the film, the annealing temperature and the annealing time during the ALD deposition. The high passivation performance of Al2O3 film of S. After optimization of technology, both SiNx:H and Al2O3 films show good passivation performance. The careful study of high efficiency passivation film provides a strong support for the subsequent application of local passivation technology to the research of Si-PEDOT:PSS hybrid batteries. (2) we deposited SiNx:H and Al2O3 passivation films on Si substrate. On the surface, SiNx:H and Al2O3 films are protected locally through the photolithography process, and then the locally covered SiNx:H and Al2O3 passivation film is obtained by HF acid corrosion. After the comparison of the lifetime of the minority, the SiNx:H film after the corrosion shows a better passivation performance, and is applied to the hybrid solar cell of Si-PEDOT:PSS, and the photoelectric conversion efficiency is increased by 0.6%. After the passivation layer, the open circuit voltage (Voc) was raised from 0.523 V to 0.557 V, which proved that the local SiNx:H passivation film has a good passivation ability from the device level. In this part of the research, we have carried out a detailed characterization and analysis of the positive PEDOT:PSS passivation, the back SiNx:H passivation, and their combination passivation effect. (3) we put forward one A more simple metal catalytic corrosion method is used to prepare a new nano cone reconfiguration structure on the silicon surface. The metal catalytic corrosion method can achieve the effect of Ag nanoparticles deposition and surface corrosion at the same time. In order to prepare the nanocone reconfiguration structure, the surface shape of nanoscale is in the way of two treatment. The nanoscale nanostructure with smaller size is optimized by comparing the different soaking time to optimize the preparation process of the nanoscale. Finally, the black silicon with optical response in all optical spectra is obtained. After the application of the black silicon to the Si-PEDOT:PSS hybrid battery, a solar cell device with a photoelectric conversion efficiency of 11.75% is prepared. For the reference device, the photoelectric conversion efficiency is increased by 1.84%. The improvement of the battery efficiency is mainly due to the stronger trapping of the nanocone reconfiguration structure and the ability to produce more contact area with the PEDOT:PSS film. (4) because the refractive index of molybdenum oxide (MoO3) is about 2.1, it is very suitable for the antireflective layer for the Si-PEDOT:PSS hybrid battery. We use software modeling to predict the optical parameters and loss currents of MoO3 as the antireflective layer. Combining the experimental results, we demonstrate the accuracy of the theoretical model. By depositing 34 nm MoO3 antireflective layers and increasing the N+ back layer, hybrid cells exhibit better optical response in the visible and long wave segments, and the short-circuit current is Js C increased to 28.7 mA/cm2., and the photoelectric conversion efficiency of the corresponding battery was 11.90%, which was greatly improved compared with the reference battery (9.23%).

【学位授予单位】：电子科技大学
【学位级别】：博士
【学位授予年份】：2017
【分类号】：TM914.4

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