衬底温度对ITO薄膜及黑硅SIS型太阳电池性能影响

发布时间：2018-04-28 23:17

本文选题：光电材料 + 太阳能　；参考：《光子学报》2017年11期

【摘要】：结合反应离子刻蚀法和掩膜法在n型硅片表面制备出圆锥状结构黑硅,利用湿法氧化法在硅片表面氧化出一层超薄SiOx,采用磁控溅射法在其表面沉积一层掺锡氧化铟(IndiumTinOxide,ITO)薄膜,在黑硅衬底上制备出ITO/SiOx/n-Si太阳电池。通过硅片表面纳米结构,增加光吸收,进而提高电池转化效率。研究结果表明,在不同衬底温度下沉积ITO时,薄膜都呈现出了良好的光学和电学性能.250℃时,ITO薄膜性能最优,在400~1 000nm波长范围内,平均透过率达到93.1%,并展现出优异的电学性能.通过优化H_2O_2预处理时间,减小了SiOx层中氧空位缺陷,SIS电池短路电流得到明显提高,从未处理前的26.84mA/cm2提升到经H_2O_2处理15min后的34.31mA/cm2.此时,电池性能最优,转化效率达到3.61%.
[Abstract]:Conical black silicon was prepared on n-type silicon substrate by reactive ion etching and mask method. A layer of ultra-thin SiOxon was oxidized on the surface of silicon by wet oxidation method. A layer of indium tin oxide ITO film was deposited on the surface by magnetron sputtering. ITO/SiOx/n-Si solar cells were fabricated on black silicon substrate. The photoabsorption can be increased by nanostructure on the surface of silicon wafer, and then the conversion efficiency of the battery can be improved. The results show that the ITO films exhibit excellent optical and electrical properties at different substrate temperatures. The average transmittance of the films reaches 93.1g in the wavelength range of 400-1 000nm and exhibits excellent electrical properties. By optimizing the pretreatment time of H_2O_2, the short-circuit current of SiOx cells with oxygen vacancy defects was significantly increased, and the 26.84mA/cm2 never treated increased to 34.31mA / cm ~ 2 after 15min was treated with H_2O_2. At this time, the battery performance is optimal, conversion efficiency reaches 3.61.
【作者单位】：南京航空航天大学材料科学与技术学院江苏省能量转换材料与技术重点实验室;
【基金】：国家自然科学基金(No.61176062) 江苏省前瞻性联合研究项目(No.BY2016003-09)资助~~
【分类号】：TM914.4

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