臭氧氧化法制造抗PID效应的单晶硅太阳电池

发布时间：2018-05-29 15:36

  本文选题：单晶硅太阳电池 + 臭氧氧化法　； 参考：《内蒙古大学》2016年硕士论文

【摘要】：单晶硅太阳能电池转化效率高(实验室转换效率达到25.6%,产业化生产的平均效率为19.5%),生产技术成熟,一直以来都是光伏产业发展的重点。本文主要是在常规单晶硅太阳电池生产中,引入03氧化技术,在电池片表面生成SiO2-SiNx钝化减反射膜结构,生产具备抗电势诱导衰减效应(PID, Potential Induced Degradation)能力的单晶硅太阳电池片的工艺方法,研究了所生成的钝化减反射膜的微观结构、以及薄膜的光学性能和生产出的电池片的电性能。用臭氧对湿法刻蚀后的硅片上表面氧化10s,在硅片上表面生成一层纳米级的Si02薄膜。结果表明,当臭氧浓度≥1200 ppm时,亲水性测试结果符合抗PID的工艺标准要求,生成的Si02薄膜厚度约为10 nm。对臭氧氧化过的硅片,采用等离子体增强气相沉积法(PECVD),在460℃的温度条件下,通过控制NH3和SiH4的流量比和淀积时间,在其表面生成双层致密程度不同的氮化硅减反射薄膜。经测试结果表明,含Si多的氮化硅膜层更为致密。生成的双层氮化硅薄膜总厚度为70-82 nm,折射率为2.1000±0.0800。最后,对采用这两种工艺方法生产出的单晶硅太阳电池片进行电性能参数测试,电池的平均开路电压和平均转换效率都得到了提升。
[Abstract]:The conversion efficiency of monocrystalline silicon solar cells is high (the conversion efficiency of laboratory reaches 25.6, the average efficiency of industrialization is 19.5%), and the production technology is mature, which has always been the focus of the development of photovoltaic industry. In this paper, the structure of SiO2-SiNx passivated antireflection film was formed on the surface of single crystal silicon solar cell by the introduction of 03 oxidation technology in the production of conventional monocrystalline silicon solar cell. The process method of producing single crystal silicon solar cell with the ability of resisting potential induced attenuation effect and Potential Induced Degradation) is studied. The microstructure of the passivated antireflection film, the optical properties of the film and the electrical properties of the produced film are studied. A nanoscale Si02 film was formed on the surface of wet etching silicon by ozone oxidation for 10 s. The results show that when the ozone concentration is greater than 1200 ppm, the hydrophilic test results meet the requirements of the process standard for PID resistance, and the thickness of the Si02 film is about 10 nm. Silicon nitride thin films with different densification degree were formed on the surface of ozonated silicon wafers by plasma enhanced vapor deposition at 460 鈩，

本文编号：1951406