全背式硅基薄膜太阳能电池的设计与制备

发布时间：2018-06-11 11:51

本文选题：薄膜太阳能电池 + 全背式电极　；参考：《电子科技大学》2017年硕士论文

【摘要】：全背式薄膜太阳能电池具有共面型PN结以及完全暴露的受光面。全背式电极完全避免了上电极对光的遮挡导致的光学损失,这点对于吸收很弱的薄膜电池来说尤为重要。同时,共面型PN结改变了载流子的输运路径,将短波长吸收区与表面“死层”区分离开,降低了表面复合,减少电学损失,提高短波效应。对全背式薄膜太阳能电池的研究具有重大的科学意义和经济价值。本文主要内容如下:首先,分析了影响常规太阳能电池性能的光学损失和电学损失。具体阐述了全背式电极结构应用于薄膜太阳能电池对电池性能带来的影响以及研究这种电池的实际意义。然后,利用半导体仿真工具TCAD对全背式薄膜太阳能电池建模,得到其光学和电学特性,发现其光学和电学性能均优于常规上下电极结构电池,进一步验证了全背式结构的优势。分别分析了P、N区掺杂宽度、掺杂浓度以及电极接触宽度等因素对电池性能的影响,得到最优化的电池参数。进一步的,根据优化得到的电池参数,开展全背式硅基薄膜太阳能电池制备工艺的研究。分别介绍了热氧化、高温扩散、光刻、电子束蒸发以及硅片减薄等工艺的原理。优化了各项工艺所需要的条件,确定了制备全背式硅基薄膜太阳能电池的各项工艺条件。对湿法和干法快速深刻蚀的方法进行对比研究,确定了利用感应耦合等离子体反应离子刻蚀将硅片减薄到14μm的方案,在此基础上进一步制备了全背式硅基薄膜太阳能电池。最后,对沉积氮化硅抗反射层和集成金字塔减反结构的全背式晶硅薄膜太阳能电池进行性能测试分析。在得到全背式薄膜电池的基础上通过PECVD在电池受光面沉积氮化硅薄膜以及利用硅的各向异性刻蚀特性制备金字塔减反结构,并分别测试得到其J-V曲线。与平板结构电池相比,集成氮化硅抗反射层和金字塔减反结构的太阳能电池的效率分别提高了31%和41.4%。
[Abstract]:Full-back thin-film solar cells have a common PN junction and fully exposed photoreceptors. The full back electrode completely avoids the optical loss caused by the optical occlusion of the upper electrode, which is particularly important for thin film cells with very weak absorption. At the same time, the coplanar PN junction changes the carrier transport path, separates the short wavelength absorption region from the "dead layer" of the surface, reduces the surface recombination, reduces the electrical loss and improves the shortwave effect. The research of full-back thin film solar cells has great scientific significance and economic value. The main contents of this paper are as follows: firstly, the optical and electrical losses that affect the performance of conventional solar cells are analyzed. The effect of full back electrode structure on the performance of thin film solar cells and the practical significance of studying this kind of cell are described. Then, the full-back thin film solar cell is modeled by the semiconductor simulation tool TCAD, and its optical and electrical properties are obtained. It is found that its optical and electrical properties are superior to those of conventional upper and lower electrode structure cells, which further verify the advantages of full-back structure. The effects of doping width, doping concentration and electrode contact width on the battery performance were analyzed, and the optimal battery parameters were obtained. Furthermore, according to the optimized parameters, the preparation process of silicon thin film solar cells was studied. The principles of thermal oxidation, high temperature diffusion, lithography, electron beam evaporation and silicon wafer thinning are introduced. The conditions for preparing silicon thin film solar cells with full back were optimized. The rapid and deep etching methods of wet and dry processes are compared, and the scheme of reducing silicon wafer to 14 渭 m by reactive ion etching with inductively coupled plasma is determined. On this basis, full-back silicon thin film solar cells are further fabricated. Finally, the performance of silicon nitride thin film solar cells with antireflection layer and pyramid antireflection structure is tested and analyzed. Silicon nitride thin films were deposited by PECVD and pyramidal antireflection structures were prepared by anisotropic etching of silicon. The J-V curves were measured respectively. The efficiency of the solar cells integrated with silicon nitride antireflective layer and pyramid antireflection structure was improved by 31% and 41.4%, respectively.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM914.4

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