基于有源功率解耦的碳化硅逆变器研究
发布时间：2018-09-05 11:43
【摘要】：在能源危机与环境污染的双重压力下,新能源发电技术得以快速发展。随着电力电子技术的不断进步,以光伏发电为代表的新能源发电领域日益普及。电力电子技术的进步与功率器件的发展息息相关,碳化硅功率器件以其开关速度高、导通损耗小、阻断电压高等优秀特点,更加适应电力电子技术的发展方向,日益为人们所关注。本文选用基于碳化硅器件的单相全桥拓扑,对SiC MOSFET器件的特性展开研究,分析和研究了逆变器系统高频化面临的问题,并对驱动和实验平台进行优化,并针对直流母线功率耦合问题开展研究。SiC MOSFET与Si MOSFET器件特性有较大差异,本文分析了SiC MOSFET器件的动、静态特性,并与近似功率等级的Si MOSFET器件进行对比分析。本文搭建了双脉冲实验平台,并对SiC MOSFET的相关特性进行了实验研究。碳化硅器件的高开关速度使得逆变器可以运行于较高的开关频率。但开通和关断瞬间较大的电压、电流变化率使得寄生参数对器件的影响较大。同时,在高开关频率运行时,桥臂电路的串扰现象较为严重。本文针对高开关频率运行时的寄生参数影响和桥臂串扰现象展开研究,分析了寄生参数和串扰的影响机理以及SiC MOSFET器件的特殊性。针对高频化存在的问题,优化了驱动电路和逆变器电路,并通过实验进行分析验证。高开关频率可以使逆变器系统以较高的功率密度运行。但在单相全桥拓扑结构中,直流母线存在2倍基频电压波动,需要较大的电解电容进行功率解耦,不利于系统功率密度和输出波形质量的提升。本文分析了直流母线电压二次波动的原理,对比了不同的功率解耦方法,并对有源功率解耦原理进行分析和数学建模,改进了有源功率解耦拓扑的控制算法,有效抑制了直流母线的电压波动,提升了逆变器输出电流质量。搭建了基于有源功率解耦功能的碳化硅并网逆变器,完成了SiC MOSFET驱动电路、控制器、采样电路等的设计与优化,逆变器开关频率为50kHz,并对有源功率解耦电路进行实验分析,验证了该方法的可行性。
[Abstract]:Under the dual pressure of energy crisis and environmental pollution, new energy generation technology has developed rapidly. With the development of power electronics technology, the field of new energy generation, represented by photovoltaic power generation, is becoming more and more popular. The progress of power electronics technology is closely related to the development of power devices. Because of its high switching speed, low conduction loss and excellent characteristics of blocking voltage, it is more suitable for the development direction of power electronics technology. People are paying more and more attention to it. In this paper, the single-phase full-bridge topology based on silicon carbide devices is selected to study the characteristics of SiC MOSFET devices, and the problems in high-frequency inverter system are analyzed and studied, and the driving and experimental platform are optimized. The characteristics of sic MOSFET and Si MOSFET devices are different from those of DC bus power coupling. The dynamic and static characteristics of SiC MOSFET devices are analyzed and compared with those of Si MOSFET devices with approximate power level. In this paper, a dual pulse experimental platform is built, and the related characteristics of SiC MOSFET are studied experimentally. The high switching speed of silicon carbide allows the inverter to operate at higher switching frequencies. However, the parasitic parameters have a great influence on the device due to the large voltage and current change rate in turn-on and turn-off. At the same time, the crosstalk of the bridge arm circuit is serious when the switching frequency is high. In this paper, the influence of parasitic parameters and crosstalk on the bridge arm during the operation of high switching frequency is studied. The influence mechanism of parasitic parameters and crosstalk and the particularity of SiC MOSFET devices are analyzed. The drive circuit and inverter circuit are optimized and verified by experiments. High switching frequency enables the inverter system to operate at a high power density. However, in the single-phase full-bridge topology, the DC bus has a voltage fluctuation of 2 times, which requires a large electrolytic capacitance to decouple the power, which is not conducive to the improvement of the system power density and the quality of the output waveform. This paper analyzes the principle of secondary fluctuation of DC bus voltage, compares different power decoupling methods, analyzes and models the principle of active power decoupling, and improves the control algorithm of active power decoupling topology. The voltage fluctuation of DC bus is restrained effectively and the output current quality of inverter is improved. The silicon carbide grid-connected inverter based on the active power decoupling function is built. The design and optimization of SiC MOSFET drive circuit, controller and sampling circuit are completed. The switching frequency of the inverter is 50 kHz, and the active power decoupling circuit is analyzed experimentally. The feasibility of the method is verified.
【学位授予单位】：中国矿业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM464
本文编号：2224164
[Abstract]:Under the dual pressure of energy crisis and environmental pollution, new energy generation technology has developed rapidly. With the development of power electronics technology, the field of new energy generation, represented by photovoltaic power generation, is becoming more and more popular. The progress of power electronics technology is closely related to the development of power devices. Because of its high switching speed, low conduction loss and excellent characteristics of blocking voltage, it is more suitable for the development direction of power electronics technology. People are paying more and more attention to it. In this paper, the single-phase full-bridge topology based on silicon carbide devices is selected to study the characteristics of SiC MOSFET devices, and the problems in high-frequency inverter system are analyzed and studied, and the driving and experimental platform are optimized. The characteristics of sic MOSFET and Si MOSFET devices are different from those of DC bus power coupling. The dynamic and static characteristics of SiC MOSFET devices are analyzed and compared with those of Si MOSFET devices with approximate power level. In this paper, a dual pulse experimental platform is built, and the related characteristics of SiC MOSFET are studied experimentally. The high switching speed of silicon carbide allows the inverter to operate at higher switching frequencies. However, the parasitic parameters have a great influence on the device due to the large voltage and current change rate in turn-on and turn-off. At the same time, the crosstalk of the bridge arm circuit is serious when the switching frequency is high. In this paper, the influence of parasitic parameters and crosstalk on the bridge arm during the operation of high switching frequency is studied. The influence mechanism of parasitic parameters and crosstalk and the particularity of SiC MOSFET devices are analyzed. The drive circuit and inverter circuit are optimized and verified by experiments. High switching frequency enables the inverter system to operate at a high power density. However, in the single-phase full-bridge topology, the DC bus has a voltage fluctuation of 2 times, which requires a large electrolytic capacitance to decouple the power, which is not conducive to the improvement of the system power density and the quality of the output waveform. This paper analyzes the principle of secondary fluctuation of DC bus voltage, compares different power decoupling methods, analyzes and models the principle of active power decoupling, and improves the control algorithm of active power decoupling topology. The voltage fluctuation of DC bus is restrained effectively and the output current quality of inverter is improved. The silicon carbide grid-connected inverter based on the active power decoupling function is built. The design and optimization of SiC MOSFET drive circuit, controller and sampling circuit are completed. The switching frequency of the inverter is 50 kHz, and the active power decoupling circuit is analyzed experimentally. The feasibility of the method is verified.
【学位授予单位】：中国矿业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM464
【参考文献】
相关期刊论文 前10条
1 董泽政;吴新科;盛况;张军明;;共源极电感对SiC MOSFET开关损耗影响的研究[J];电源学报;2016年04期
2 李伟娜;;中国城市雾霾治理的内在机理与路径选择研究[J];理论探讨;2016年01期
3 任东明;;“十三五”可再生能源发展展望[J];科技导报;2016年01期
4 张孝德;;“十三五”经济转型升级新思维:新能源革命引领战略[J];国家行政学院学报;2015年02期
5 蒋强;党裕民;李敏;张自友;;光伏发电系统中电能质量的分析与测试[J];电测与仪表;2015年06期
6 郭雪梅;吕利;王轶;白丹;;分布式新能源可持续发展探析[J];宏观经济管理;2015年02期
7 胡光铖;陈敏;陈烨楠;习江北;徐德鸿;;基于SiC MOSFET户用光伏逆变器的效率分析[J];电源学报;2014年06期
8 赵斌;秦海鸿;马策宇;袁源;钟志远;;SiC功率器件的开关特性探究[J];电工电能新技术;2014年03期
9 廖祺;;雾霾天气引发有关新能源产业的思考[J];当代经济;2013年09期
10 祝国平;阮新波;王学华;杨志兵;;两级式单相逆变器二次纹波电流的抑制与动态特性的改善[J];中国电机工程学报;2013年12期
相关博士学位论文 前1条
1 汤晓燕;6H-SiC肖特基势垒源漏MOSFET理论和实验的研究[D];西安电子科技大学;2007年
相关硕士学位论文 前5条
1 赵斌;SiC功率器件特性及其在Buck变换器中的应用研究[D];南京航空航天大学;2014年
2 张扬帆;面向光伏并网逆变器的混合PWM调制方法[D];浙江大学;2014年
3 胡光铖;SiC单相光伏逆变器效率分析[D];浙江大学;2014年
4 李晓光;中国太阳能光伏产业的国际化成长战略研究[D];北京工业大学;2012年
5 张海钰;单相光伏并网发电系统关键技术的研究[D];浙江大学;2011年
，本文编号：2224164
本文链接：https://www.wllwen.com/kejilunwen/dianlidianqilunwen/2224164.html
