T型三电平逆变器损耗与开路故障研究

发布时间：2018-12-25 12:02

【摘要】：自1950年以来,电力电子技术得到了飞速的发展,其产物已应用于生活中的方方面面。多电平逆变器自从被提出后就引起了世界各学者、各研究机构和各公司的高度注意。多电平逆变器可以根据其电平数分为两电平逆变器、三电平逆变器和多电平逆变器。本文研究的对象是三电平逆变器中的一种,即T型三电平逆变器,主要研究内容如下:1、详细的对T型三电平逆变器的工作原理进行分析,并且介绍了一些常用的调制策略的基本原理。2、推导了T型三电平逆变器的损耗模型,通过仿真对比了不同调制策略下T型三电平逆变器功率器件的损耗情况。例如分别基于SPWM与SHEPWM两种调制策略,针对不同调制度M,不同功率因数角θ,不同输出电流Im的工况下,分析对比两种调制策略下的损耗。通过研究得到T型三电平逆变器在不同工作模式下的IGBT模块损耗情况及其对可靠性的影响。3、研究了开路故障的检测方法,开路故障下功率器件的损耗,开路状态下功率器件的发热与可靠性。4、本文搭建了T型三电平逆变器实验平台。通过红外线热成像仪测量了SPWM与SHEPWM策略下的功率器件结温,并测量了出现开路故障时功率器件的结温。仿真结果和实验结果均为T型三电平逆变器损耗和可靠性的研究奠定了基础。
[Abstract]:Power electronics technology has been developing rapidly since 1950, and its products have been applied in every aspect of life. Since it was proposed, multilevel inverter has attracted the attention of scholars, research institutions and companies all over the world. Multilevel inverter can be divided into two-level inverter, three-level inverter and multi-level inverter according to its level number. The main contents of this paper are as follows: 1. The working principle of T type three-level inverter is analyzed in detail. The basic principles of some common modulation strategies are also introduced. 2. The loss model of T type three-level inverter is derived, and the power device loss of T type three-level inverter under different modulation strategies is compared by simulation. For example, based on two modulation strategies of SPWM and SHEPWM, the loss of the two modulation strategies is analyzed and compared under the conditions of different modulation system M, different power factor angle 胃 and different output current Im. The loss of IGBT module and its influence on reliability of T type three-level inverter under different operating modes are obtained. 3. The detection method of open circuit fault and the loss of power device under open circuit fault are studied. The heating and reliability of power devices in open circuit state. 4. The experimental platform of T-type three-level inverter is built in this paper. The junction temperature of power device under the strategy of SPWM and SHEPWM is measured by infrared thermal imager, and the junction temperature of power device in open circuit fault is measured. The simulation results and experimental results lay a foundation for the study of the loss and reliability of T type three-level inverter.
【学位授予单位】：安徽大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TM464

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