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P型微晶硅氧薄膜光电性能研究

发布时间:2019-05-08 17:15
【摘要】:本工作采用甚高频等离子体化学气相沉积(VHF-PECVD)技术制备了P型微晶硅氧窗口层薄膜,讨论了P型微晶硅氧的光电特性随硼烷掺杂率的变化。采用紫外-可见透射光谱,拉曼光谱,傅立叶变换红外吸收光谱(FTIR),暗电导测量对薄膜的光电特性进行了表征。结果表明,P型微晶硅氧材料均表现为微晶态,随着硼烷掺杂率增加,晶化程度逐步降低,暗电导率快速减小,光学带隙持续降低。该结果可归因于硼烷掺杂的增加抑制晶化使得非晶成分增多,有效掺杂率降低导致薄膜电导率下降,另一方面,对硅氧物相分离的阻碍作用导致薄膜带隙下降。硼烷掺杂率为0.4%样品的电导率高达0.158 S/cm且光学带隙为2.2 e V,兼具高透射性和良好电导率,可作为高效硅基太阳电池的窗口层。
[Abstract]:P-type microcrystalline silicon oxide window layer films were prepared by very high frequency plasma chemical vapor deposition (VHF-PECVD) technique. The change of photoelectric properties of P-type microcrystalline silicon oxide with borane doping ratio was discussed. The photoelectric properties of the films were characterized by UV-vis transmission spectroscopy, Raman spectroscopy and Fourier transform infrared absorption spectroscopy (FTIR),). The results show that all P-type microcrystalline silicon oxygen materials are microcrystalline, with the increase of borane doping rate, the crystallization degree decreases gradually, the dark conductivity decreases rapidly, and the optical band gap decreases continuously. The results can be attributed to the increase of borane doping to inhibit crystallization, the increase of amorphous composition, the decrease of effective doping rate and the decrease of electrical conductivity. On the other hand, the hindrance to phase separation of siloxane leads to the decrease of band gap. The sample with 0.4% borane has a high conductivity of 0.158 S/cm and an optical band gap of 2.2eV. It has both high transmittance and good conductivity. It can be used as a window layer for high efficiency silicon-based solar cells.
【作者单位】: 中国华能集团清洁能源技术研究院有限公司;河北大学物理科学与技术学院;
【基金】:华能集团科技项目(TW-13-CERI01)
【分类号】:TM914.4

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