IGBT开关机理对逆变器死区时间的影响

发布时间：2018-01-04 14:23

本文关键词：IGBT开关机理对逆变器死区时间的影响　出处：《电机与控制学报》2014年05期 　论文类型：期刊论文

【摘要】：为了研究逆变器中功率器件对死区时间设置的影响,依据半导体物理理论与死区时间的计算依据,研究了电压、电流、温度对绝缘栅双极型晶体管(insulated-gate bipolar transistor,IGBT)开关时间的影响机理,给出了这3个因素对IGBT开关时间的影响规律,并得到了这3个因素对死区时间的影响机理。通过对两电平半桥逆变单元测试表明:死区时间随电压的增大近似呈线性关系增大,随电流的增大近似呈指数和双曲线复合关系而减小,随温度的增大近似呈线性关系增大,且按照计算依据得到的死区时间与实测桥路直通的发生相符,验证了理论分析的正确性。得出的结论可为实际应用中逆变器等电能变化装置死区时间的设置以及死区补偿算法的优化提供重要的参考依据。
[Abstract]:In order to study the effect of power inverter device for dead time settings, calculated on the basis of basis theory of semiconductor physics and dead time, voltage, current research, the temperature of the insulated gate bipolar transistor (insulated-gate bipolar transistor, IGBT) the influence mechanism of switching time, the effects of these 3 factors on the IGBT switching time. The mechanism of these 3 factors on the dead time is obtained. Through the test of the two level inverter unit show that the dead time is linear with the increase of the voltage increases with the increase of current approximation, approximate exponential and hyperbolic relationship of composite decreases with the increase of the temperature is linear increase, and in accordance with the dead time the measured and calculated on the basis of the bridge through the line, verify the correctness of the theoretical analysis. The conclusion for the practical application in power inverter Can provide the important reference for the optimization of device changes the setting of dead time and dead time compensation algorithm.

【作者单位】：海军工程大学舰船综合电力技术国防科技重点实验室;
【基金】：国家自然科学基金重点项目(50737004);国家自然科学基金(51277178) 国家重点基础研究发展计划973项目(2013CB035601)
【分类号】：TM464
【正文快照】： 0引言随着电力电子装置在风力发电、高速电力机车、区域配电等场合的应用日益广泛,其核心全控型功率器件———绝缘栅双极型晶体管(insulated-gate bipo-lar transistor,IGBT)的工作等级越来越高,工作环境越来越恶劣,对大容量电能变换装置的可靠性也提出了更加严格的要求。作

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