黑硅太阳能电池的工艺研究

发布时间：2018-01-07 06:25

本文关键词：黑硅太阳能电池的工艺研究　出处：《北京交通大学》2014年硕士论文　论文类型：学位论文

【摘要】：当前,为了降低生产成本,硅片薄片化成为晶体硅太阳能电池的发展趋势之一。硅片变薄时,对光吸收和钝化的要求非常严格,特别是在钝化效果较好时,光吸收就成为了制约电池效率提升的关键因素。因此,需要最大限度地增加硅基体对光线的吸收以提高太阳能电池的转换效率。文中制备的黑硅硅片在300～1100nm光谱范围内对入射光能达到95%的吸收率。本文利用等离子体侵没离子注入技术制备多晶黑硅,其原理为将硅片直接浸没在等离子体中,然后在硅片上施加负偏压,由于在硅片表面形成鞘层,所以硅片表面各处将同时被注入反应离子,并与硅片发生反应形成黑硅。本文采用自主搭建的等离子体侵没离子注入系统,研究出了一套制备黑硅硅片的最佳工艺,并初步实现了黑硅硅片的低成本批量制造；之后,将制备好的黑硅硅片做成太阳能电池,其开路电压、短路电流和填充因子分别为0.625V,8.750A和79.116%,转换效率可达17.79%,比常规太阳能电池转换效率高0.3%。由于黑硅硅片的纳米结构,使得硅片具有大的表面积和大量的表面态,其电子态和能带结构也发生了变化,所以本文还对黑硅表面钝化工艺进行了一系列研究,希望找到能有效降低黑硅表面活性和提高少数载流子寿命的方法。实验采用传统硅工艺使用的等离子增强化学气相沉积(PECVD)技术生长氮化硅薄膜来对硅片表面进行钝化,主要研究了气体比例、沉积温度和沉积时间对减反作用和钝化作用的影响；同时还研究了沉积条件对电池内、外量子效率的影响。
[Abstract]:At present, in order to reduce the production cost, wafer formation is one of the development trends of crystalline silicon solar cells. When silicon wafers become thinner, the requirements of light absorption and passivation are very strict, especially when the passivation effect is better. Light absorption has become a key factor that restricts the efficiency of the battery. In order to improve the conversion efficiency of solar cells, the absorption of light by silicon substrate should be increased to the maximum extent. In this paper, the absorption of incident light energy of the black silicon wafer can reach 95% in the range of 300 nm 1100nm. Rate. In this paper, polycrystalline black silicon is prepared by plasma immersion ion implantation technique. The principle is to immerse silicon wafer directly in plasma, then apply negative bias on silicon wafer, because of the formation of sheath on the surface of silicon wafer. So the reaction ions will be implanted all over the surface of the silicon wafers and react with the silicon wafers to form black silicon. A set of optimum technology for preparing black silicon wafer has been developed, and the low cost batch manufacture of black silicon wafer has been preliminarily realized. After that, the prepared silicon wafer was made into a solar cell with an open circuit voltage, a short circuit current and a filling factor of 0.625 V, 8.750A and 79.116%, respectively. The conversion efficiency is 17.79, which is 0.3% higher than that of conventional solar cells. Due to the nano-structure of black silicon wafer, the silicon wafer has a large surface area and a large number of surface states, its electronic state and energy band structure have also changed. Therefore, a series of research on the surface passivation process of black silicon is also carried out in this paper. It is hoped that the method of reducing the surface activity of black silicon and increasing the lifetime of minority carriers can be found effectively. Plasma enhanced Chemical Vapor deposition (PECVD) using traditional silicon process was used in the experiment. The silicon nitride thin film is grown to passivate the surface of silicon wafer. The effects of gas ratio, deposition temperature and deposition time on antireaction and passivation are studied. The effect of deposition conditions on the quantum efficiency in and out of the cell is also studied.
【学位授予单位】：北京交通大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM914.4

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