等离子体增强化学气相沉积工艺制备SiON膜及对硅的钝化

发布时间：2018-01-22 10:53

本文关键词： 氮氧化硅等离子体增强化学气相沉积背面钝化晶硅太阳能电池　出处：《物理学报》2014年12期 　论文类型：期刊论文

【摘要】：研究了等离子体增强化学气相沉积工艺条件对氮氧化硅膜的生长厚度及折射率的影响以及氮氧化硅/氮化硅叠层膜对p型硅片的钝化效果.实验结果表明,NH3的流量和N2O/SiH4流量比对氮氧化硅膜的影响较大,薄膜折射率能从1.48变化到2.1,厚度从30—60 nm不等.腔内压力和射频功率主要影响膜厚,压力越大,功率越大,沉积速率加快,生成的膜越厚.温度对膜厚和折射率的影响可以忽略.钝化效果显示,在有无NH3下,N2O/SiH4流量比分别为20和30时,退火后氮氧化硅/氮化硅叠层膜对p型硅的钝化效果最好,其潜在电压和少子寿命分别为652 mV,56.7μs和649 mV,50.8μs,均优于参照组氮化硅膜样品的钝化效果.
[Abstract]:The effects of plasma enhanced chemical vapor deposition conditions on the growth thickness and refractive index of silicon oxide film and the passivation effect of silicon nitrogen oxide / silicon nitride laminated film on p type silicon wafer were studied. The flow rate of NH3 and the flow rate of N _ 2O / SiH _ 4 have great influence on the nitrous oxide film, and the refractive index of the film changes from 1.48 to 2.1. The thickness varies from 30 nm to 60 nm. The pressure in the cavity and RF power mainly affect the film thickness. The higher the pressure, the greater the power and the faster the deposition rate. The effect of temperature on film thickness and refractive index can be neglected. The passivation effect shows that the flow ratio of N _ 2O _ 2 / Si _ 4 is 20 and 30 respectively with or without NH3. After annealing, silicon oxide / silicon nitride laminated film has the best passivation effect on p-type silicon, its potential voltage and minority carrier lifetime are 652 MV / 56.7 渭 s and 649 MV / 50.8 渭 s, respectively. The passivation effect of silicon nitride film was better than that of the reference group.
【作者单位】：湘潭大学材料与光电物理学院低维材料与应用技术教育部重点实验室;中国科学院上海技术物理研究所红外物理国家重点实验室;南通大学江苏省专用集成电路设计重点实验室;
【基金】：国家重点基础研究发展计划(批准号:2011CB925604,2011CB922004) 中国博士后科学基金(批准号:20110490075)资助的课题~~
【分类号】：TM914.42
【正文快照】： 1引言晶体硅太阳能电池背面钝化和背面反射增强是改善其性能的重要手段.当前,商业化的晶体硅太阳能电池广泛采用n+/p/p+结构,其背场设计多采用铝背场(Al-BSF).这种电池工艺简单,成本低廉,但其效率普遍只有16.5%—17.5%.这是因为材料中少子扩散长度短,并且背面少数载流子的复合

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