铜铟镓硒太阳能电池的多层复合吸收层薄膜的制备及特性研究

发布时间：2018-02-14 09:55

本文关键词： CIGS 混合多步沉积沉积时间 Cu2-xSe 结晶度　出处：《华中科技大学》2014年硕士论文　论文类型：学位论文

【摘要】：太阳能电池是一种发展前景可观的清洁能源，其具有无污染、利用成本低、不受地域的限制等优点，在一些国家和地区得到广泛应用。近些年，许多研究者致力于开发新一代的太阳能电池，其中铜铟镓硒（Cu(In,Ga)Se2, CIGS）薄膜太阳能电池因具有光电转化效率高、抗辐射能力强、弱光性好、工作性能稳定和生产成本低的特点，而被认为是一种最有发展潜力的薄膜太阳能电池。目前，在CIGS吸收层的多种制备方法中仅有三步共蒸发法和溅射后硒化法得到了效率较高的小面积电池。但是，这两种方法工艺过程复杂、成本较高，也不能够大面积沉积，所以这两种方法难以大规模产业化生产。相对于蒸发镀膜工艺，磁控溅射镀膜技术具有薄膜致密性高、附着力强、组分均匀性好、原材料利用率高和大面积沉积等优点，，是一种比较成熟的薄膜制备工艺。因此，本文中我们采用磁控溅射法制备CIGS吸收层。在实验中，利用两块不同组分的铜铟镓硒Cu-In-Ga-Se四元靶材，采用混合多步溅射的方法，分别溅射制备不同铜含量的CIGS预置层，经过热处理后得到多层复合的CIGS吸收层；其中，有目的地引入一步铜过量沉积阶段制备一层富Cu的CIGS预置层，这一层中产生的Cu2-xSe二次相能够促进CIGS晶粒生长，提高薄膜的结晶度。同时，我们改变铜过量沉积阶段的沉积时间，研究、分析在不同沉积方案下制备的CIGS吸收层的成分、结构、形貌和光学及电学特性的变化。最后，用该方法制备的CIGS光吸收层与磁控溅射制备的ZnS缓冲层组合制成简易的CIGS薄膜太阳能电池，并测试、分析所制备的电池的性能。
[Abstract]:Solar cell is a kind of clean energy with promising development prospect. It has the advantages of no pollution, low utilization cost and no limitation of region. It has been widely used in some countries and regions in recent years. Many researchers are committed to the development of a new generation of solar cells, in which the copper indium gallium selenite cuprum InGaSe Se2 (CIGS) thin film solar cells have the characteristics of high photoelectric conversion efficiency, strong radiation resistance, good weak light, stable working performance and low production cost. It is considered to be one of the most promising thin-film solar cells. At present, only three-step co-evaporation and post-sputtering selenization have been used to obtain small area batteries with high efficiency among the various preparation methods of CIGS absorption layer. However, these two methods have complex process, high cost, and can not be deposited in large area. So these two methods are difficult to produce on a large scale. Compared with the evaporation coating process, the magnetron sputtering coating technology has the advantages of high film density, strong adhesion, good component uniformity, high utilization ratio of raw materials and large area deposition. Therefore, the magnetron sputtering method is used to fabricate the CIGS absorption layer. In the experiment, two different copper indium gallium selenium (Cu-In-Ga-Se) quaternary target materials were used to fabricate CIGS prefabricated layers with different copper content by mixed multistep sputtering. After heat treatment, multilayer composite CIGS absorption layer was obtained. A Cu rich CIGS predeposited layer was prepared by introducing one step copper excess deposition stage. The Cu2-xSe secondary phase produced in this layer can promote the growth of CIGS grains and improve the crystallinity of the film. At the same time, we change the deposition time of the copper excess deposition stage. The composition, structure, morphology and optical and electrical properties of the CIGS absorption layer prepared under different deposition schemes were studied and analyzed. A simple CIGS thin film solar cell was prepared by combining the CIGS optical absorption layer prepared by this method and the ZnS buffer layer prepared by magnetron sputtering. The performance of the prepared CIGS thin film solar cell was tested and analyzed.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM914.4

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