钛氧化物忆阻器导电机理与阻抗控制研究

发布时间：2018-03-04 00:05

本文选题：钛氧化物忆阻器　切入点：杂质漂移　出处：《国防科学技术大学》2014年博士论文　论文类型：学位论文

【摘要】：钛氧化物忆阻器是理论忆阻器的一种物理实现,是当前国内外材料学、电路学及人工智能等科学领域广泛研究的热点,该电路元件的出现将可能从根本上改变电子信息技术的物理基础。然而,钛氧化物忆阻器具有纳米量级的尺寸及复杂的电路学特性,其导电过程受不同材料、参数及机理的作用与影响,虽经多方研究,目前尚未形成定论,由此产生的钛氧化物忆阻器阻抗状态控制与应用是亟待解决的关键问题。本文主要围绕钛氧化物忆阻器导电机理及阻抗状态控制方法进行了深入研究。本文主要研究内容包括:(1)深入调研了钛氧化物忆阻器领域的发展现状,分析了国内外关于器件制备,导电机理,建模仿真及应用的研究现状,归纳总结了当前研究中尚存的不足。(2)提出了在钛氧化物忆阻器中杂质漂移与隧道势垒共存的导电机理,并基于此提出了一种共存模型,通过模型仿真对杂质漂移与隧道势垒的共存机理进行了验证。研究表明,相对于杂质漂移或隧道势垒机理,两者共存的导电机理能够更客观的反映器件导电的物理规律,并且两种机理的共存是导致忆阻器导电行为具有不稳定性的主要原因。(3)基于所提出的共存模型研究了各个器件参数及工作参数对钛氧化物忆阻器导电特性的影响,并据此提出了提高器件导电稳定性的方法,对制备具有优良导电特性的钛氧化物忆阻器具有潜在价值。(4)分别针对杂质漂移模型、隧道势垒模型及杂质漂移与隧道势垒共存模型研究了钛氧化物忆阻器阻抗状态的控制方法,并基于杂质漂移模型提出了一种钛氧化物忆阻器阻抗状态控制电路,利用SPICE仿真验证了所提出电路的正确性。(5)基于钛氧化物忆阻器阻抗控制方法设计了一种通频带参数可调且非易失的模拟滤波电路,该电路实现了通频带参数在设计范围内的精确调整,并且具有断电非易失的特性,解决了传统模拟滤波器电路中改变通频带参数需改变电路结构的问题。(6)基于钛氧化物忆阻器阻抗控制方法设计了一种模拟信号加密解密电路,该电路分别利用忆阻器的非线性导电特性及电荷记忆性对模拟信号进行加密与解密,为忆阻器应用于信息安全领域提供了新的思路。最后,在总结本课题研究工作的基础上,提出了后续工作的改进建议。
[Abstract]:Titanium oxide resistor is a kind of physical realization of theoretical resistor, which is a hot spot in the field of material science, circuit science and artificial intelligence at home and abroad. The emergence of this circuit element may fundamentally change the physical basis of electronic information technology. However, titanium oxide amnesia devices have nanoscale size and complex electrical properties, and their conductive processes are subject to different materials. Although the effects and effects of parameters and mechanisms have been studied in many ways, no conclusion has been reached at present. Therefore, the impedance state control and application of titanium oxide memristor are the key problems to be solved. This paper mainly focuses on the conductive mechanism and impedance state control method of titanium oxide memristor. The main contents of this paper are as follows: 1. The contents of the study include: 1) the current situation of titanium oxide memory devices has been investigated. The research status of device fabrication, conduction mechanism, modeling, simulation and application at home and abroad are analyzed, and the remaining deficiencies in current research are summarized. The conductive mechanism of impurity drift and tunneling barrier coexisting in titanium oxide amnesia is put forward. Based on this, a coexistence model is proposed, and the coexistence mechanism of impurity drift and tunneling barrier is verified by simulation. The results show that, compared with impurity drift or tunneling barrier mechanism, The conduction mechanism of the two coexisting can reflect the physical law of the electric conduction of the device more objectively. The coexistence of the two mechanisms is the main reason for the instability of the conductive behavior of the device. (3) based on the proposed coexistence model, the effects of the device parameters and the operating parameters on the conductive characteristics of the titanium oxide memory device are studied. Based on this, a method to improve the conductive stability of the device is proposed, which has potential value for preparing titanium oxide amnesia with excellent conductive properties. Tunnel barrier model and the coexistence model of impurity drift and tunneling barrier are used to study the impedance state control method of titanium oxide memristor. Based on impurity drift model, a kind of impedance state control circuit of titanium oxide memristor is proposed. The correctness of the proposed circuit is verified by SPICE simulation. (5) based on the impedance control method of titanium oxide resistor, an analog filter circuit with adjustable pass band parameters and non-volatile parameters is designed. The circuit realizes the accurate adjustment of the parameters of the passband in the design range, and has the characteristics of non-volatile power loss. This paper solves the problem of changing the circuit structure in the traditional analog filter circuit. (6) based on the impedance control method of titanium oxide amnesia, an analog signal encryption and decryption circuit is designed. The circuit encrypts and decrypts the analog signal by using the nonlinear conductive characteristics and the charge memory of the resistor, which provides a new way of thinking for the application of the resistor in the field of information security. Finally, based on the summary of the research work in this paper, Suggestions for improvement of follow-up work are put forward.
【学位授予单位】：国防科学技术大学
【学位级别】：博士
【学位授予年份】：2014
【分类号】：TM501

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