金刚石线锯切割多晶硅片表面特性与酸刻蚀制绒问题

发布时间：2018-03-11 19:02

本文选题：多晶硅　切入点：金刚石线锯　出处：《光子学报》2014年08期 　论文类型：期刊论文

【摘要】：为解决金刚石切割多晶硅片与常规HF-HNO3-H2O混合酸湿法制绒技术不兼容的问题,对金刚石切割多晶硅片的表面特性和大幅度提高混合酸溶液中HF的比例进行了刻蚀制绒实验.结果表明,金刚石线切割多晶硅片表面存在约33%的光滑条带区域,其余为与砂浆切割硅片表面相近的粗糙崩坑区域;这些光滑区域使得金刚石切割多晶硅片表面光反射率比砂浆切割多晶硅片高3%~4%;而且光滑区域在富HNO3和富HF的HF-HNO3-H2O混合酸溶液中均较难于腐蚀,使其刻蚀制绒后反射率比砂浆切割多晶硅片低1%~2%,制绒后的金刚石切割多晶硅片反射率比制绒后的砂浆切割多晶硅片高4%~6%,不能满足太阳电池生产要求.富HNO3和富HF两种酸刻蚀体系,均不能解决金刚石切割多晶硅片的制绒问题.
[Abstract]:In order to solve the problem of incompatibility between diamond cut polysilicon wafer and conventional HF-HNO3-H2O mixed acid wet cashmere technology, The surface characteristics of diamond cut polysilicon wafer and the increase of HF ratio in mixed acid solution were studied. The results showed that there was a smooth strip region of about 33% on the surface of diamond wire cut polysilicon wafer. The others are rough crater areas similar to the cutting surface of mortar. These smooth regions make the surface light reflectivity of diamond cut polysilicon wafer 3% higher than that of mortar cutting polysilicon wafer, and the smooth region is more difficult to corrode in HF-HNO3-H2O mixed acid solution rich in HNO3 and HF. The reflectivity of the diamond cut polysilicon wafer after etching is 1 / 2 lower than that of the mortar cutting polysilicon wafer. The reflectivity of the diamond cut polysilicon wafer after making cashmere is 4 / 6 higher than that of the mortar cutting polysilicon wafer after making the pile, which can not meet the requirements of solar cell production. Rich in HNO3 and HF. Two kinds of acid etching systems, Neither of them can solve the problem of making polysilicon wafer by diamond cutting.
【作者单位】：南昌大学太阳能光伏学院;
【分类号】：TM914.4;;TN305.2

【相似文献】