磁控溅射制备ZnO缓冲层薄膜的微观结构和光学性能

发布时间：2018-03-31 07:31

  本文选题：衬底温度　切入点：溅射气压　出处：《稀有金属材料与工程》2014年09期

【摘要】：研究了衬底温度、溅射气压对磁控溅射沉积ZnO缓冲层薄膜的微观结构、表面形貌和光学性能的影响。结果表明,衬底温度、溅射气压对ZnO缓冲层薄膜表面形貌、晶粒尺寸、禁带宽度和光学透过率等有较大影响。综合分析得出最佳的制备ZnO缓冲层薄膜的工艺为250℃、0.6 Pa。在此工艺下制备的ZnO缓冲层薄膜具有很好的ZnO(002)面c轴择优取向,结构致密、尺寸均匀,禁带宽度为3.24 eV,可见光平均透过率为86.93%,符合作CIGS太阳能电池缓冲层的要求。
[Abstract]:The effects of substrate temperature and sputtering pressure on the microstructure, surface morphology and optical properties of ZnO buffer film deposited by magnetron sputtering were studied. The results show that the substrate temperature and sputtering pressure affect the surface morphology and grain size of ZnO buffer film. The synthetic analysis shows that the best process for preparing ZnO buffer film is 250 鈩，

本文编号：1689770