铜基硫硒化物薄膜太阳能电池吸收层材料的制备

发布时间：2018-04-21 01:04

本文选题：铜基硫硒化物 + 溶剂热法　；参考：《电子科技大学》2015年硕士论文

【摘要】：铜基硫硒化物纳米材料继承了铜基硫族化合物的众多材料特性,具有广泛的应用前景;同时,通过调节材料硫硒比例,可实现对材料形貌、结构、导电系数、禁带宽度等性能的可控调节。因此众多研究人员致力于制备性能优良的铜基硫硒化物纳米材料,并希望实现其商业化应用。铜基硫硒化物纳米材料制备工艺种类众多,其中,部分基于真空或高温条件下的制备工艺设备造价昂贵,难以实现商业化制备,因此本文选取非真空制备工艺进行深入研究。其中溶剂热法制备工艺具有成本低廉,操作简便,环境友好,材料转换率高,易于实现规模化生产等诸多优点。但其瓶颈在于溶剂热法合成铜基硫硒化物纳米材料反应时间过长。为解决这一问题,本文从反应动力学角度出发,对溶剂热制备工艺反应动力学相关影响因素进行总结分析,得推论:Se源反应活性及溶解度过低是导致溶剂热制备工艺反应时间过长的主要原因。根据这一推论,本文提出了一种溶剂热制备工艺优化方案用以合成铜基硫硒化物纳米材料。并通过设计一系列对照实验,对以上推论及本文提出的溶剂热法优化方案进行验证。所得实验结果与推论相一致。在后续工作中,应用溶剂热法优化方案制备了一系列铜基硫硒化物,以验证优化方案的有效性与可重复性。主要研究成果如下:(1)在乙二胺反应环境下用NaBH4活化硫/硒单质制备高反应活性硫/硒前驱体,并用于溶剂热法合成铜基硫硒化物纳米材料,实验结果表明溶剂热制备工艺反应时间缩短至2 h。(2)使用溶剂热法优化方案制备了三元Cu2-x(SySe1-y)纳米材料、四元Cu In(SxSe1-x)2纳米材料、五元Cu2ZnSn(SxSe1-x)4纳米材料。通过对材料形貌、物相、结构、成分及禁带宽度特性的表征,验证了该优化溶剂热法优化方案的有效性与普适性。实验结果表明,本文提出的铜基硫硒化物溶剂热制备工艺优化方案有效可行,能够大幅缩短反应时间至2 h,所制备铜基硫硒化物半导体材料性能良好,适于制备薄膜太阳能电池吸收层材料,为今后的薄膜太阳能电池商业化生产积累了经验。
[Abstract]:Copper based sulfur selenides nanomaterials inherit many properties of copper based sulfur compounds and have a wide application prospect. At the same time, by adjusting the ratio of sulfur to selenium, the morphology, structure and conductivity of the materials can be realized. Controllable adjustment of bandgap and other properties. Therefore, many researchers are committed to the preparation of copper-based sulphoselenides nanomaterials and hope to realize their commercial applications. There are many kinds of preparation processes for copper based sulfur selenides nanomaterials, among which, part of the preparation process equipment based on vacuum or high temperature is expensive, so it is difficult to realize commercial preparation. Therefore, the non-vacuum preparation process is selected for further study in this paper. The solvothermal preparation process has many advantages, such as low cost, simple operation, friendly environment, high material conversion rate, easy to realize large-scale production and so on. However, the bottleneck is that the reaction time is too long for the solvothermal synthesis of copper-based sulphoselenides nanomaterials. In order to solve this problem, from the point of view of reaction kinetics, this paper summarized and analyzed the factors related to the reaction kinetics of solvothermal preparation process. It is inferred that the low activity and solubility of the reaction of 1: se source are the main reasons for the excessive reaction time of solvothermal preparation process. Based on this inference, an optimized solvothermal preparation method is proposed for the synthesis of copper based sulphoselenides nanomaterials. A series of controlled experiments were designed to verify the above inference and the solvothermal optimization scheme proposed in this paper. The experimental results are consistent with the corollary. In the following work, a series of copper-based sulphoselenides were prepared by solvothermal optimization to verify the effectiveness and repeatability of the optimized scheme. The main research results are as follows: (1) in the presence of ethylenediamine, the highly reactive sulfur / selenium precursor was prepared by using NaBH4 activated sulfur / selenium single substance and used in the solvothermal synthesis of copper based sulphoselenides nanomaterials. The experimental results show that the reaction time of solvothermal preparation process is shortened to 2 h. 2) Ternary Cu In(SxSe1-x)2 nanomaterials, quaternary Cu In(SxSe1-x)2 nanomaterials and quintuple Cu2ZnSn(SxSe1-x)4 nanomaterials have been prepared by solvothermal optimization method. The properties of morphology, phase, structure, composition and band gap width of the optimized solvothermal method were characterized, and the effectiveness and universality of the optimized solvothermal optimization scheme were verified. The experimental results show that the proposed solvothermal preparation method is effective and feasible, and can greatly shorten the reaction time to 2 h. The prepared copper-based sulfide-selenide semiconductor material has good properties. It is suitable for the preparation of thin film solar cell absorbent layer material, which accumulates experience for the commercial production of thin film solar cell in the future.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.1;TM914.4

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