高电压梯度大通流能力ZnO压敏电阻的研究

发布时间：2018-05-03 15:49

本文选题：ZnO压敏电阻 + 多元粉体　；参考：《西安电子科技大学》2014年硕士论文

【摘要】：ZnO压敏电阻器因其优良的非线性伏安特性和瞬态浪涌电流吸收能力而在电力、电子领域得到了广泛应用。如何在提高ZnO压敏陶瓷的压敏电压梯度的同时也提高大电流通流能力始终是一大难题。本论文旨在保证其他各项电性能优良的基础上,研究制备高压敏电压梯度、大通流能力的ZnO压敏元件。利用固相法和溶胶-凝胶法在其它条件相同的情况下分别制备ZnO压敏电阻样品,研究了配方和工艺对ZnO压敏电阻器的微观结构和各项电性能的影响。首先采用传统的固相法分别制备了Bi2O3、SnO2以及Sb203掺杂的三个系列的ZnO压敏电阻样品,用扫描电镜分析了元件内部的微观结构,测试了不同摩尔含量的Bi2O3、SnO2和Sb203掺杂的ZnO基压敏电阻的压敏电压梯度、非线性系数和漏电流,并计算了残压比和压敏电压变化率,讨论了三种添加剂的含量对ZnO压敏电阻器的微结构和电性能的影响。实验结果表明：随着Bi203掺杂量的递增,ZnO压敏电阻器的压敏电压梯度和非线性系数先增加后减小,漏电流则先减小后增加,当Bi203添加量为0.310 mo1%时,样品的整体电性能最好：压敏电压梯度VlmA=435V/ mm,非线性系数αα=42,漏电流IL=3μA,残压比K=1.96,在耐受8/20,μs脉冲电流后压敏电压变化率△VlmA/VlmA=4.89%;随着Sn02含量的减少,ZnO压敏电阻器的压敏电压梯度和非线性系数都逐渐降低,漏电流逐渐增大,当Sn02掺杂量为0.574mo1%时,样品的综合电性能最好：压敏电压梯度VlmA=408V/mm,非线性系数α=34,漏电流IL=5μA,残压比K=2.02,在耐受8/20,us脉冲电流后压敏电压变化率△VlmA/VlmA=9.13%;随着Sb203掺杂量的递增,ZnO压敏电阻器的压敏电压梯度和非线性系数先减小后增加,漏电流则先增加后减小,当Sb203掺杂量为0.572 mo1%时,样品的综合电性能最好：压敏电压梯度VlmA=420V/mm,非线性系数αα=38,漏电流IL=3μA,残压比K=2.01,在耐受8/20μs脉冲电流后压敏电压变化率△VlmA/VlmA=7.58%。接着将Sol-Gel法制备的Mn2O3、NiO、Bi2O3、Co3O4多元氧化物粉体和Mn2O3、 NiO、Bi2O3、Co3O4、SnO2多元氧化物粉体分别引入到ZnO压敏元件的制备工艺中：首先制备出Mn、Ni、Bi、Co(和Sn)四(五)种金属的氧化物复合粉体,再与其他几种氧化物添加剂和主料ZnO混合,在合适的条件下制备出了厚度为1.0mm左右,直径为8.8 mm左右的压敏电阻片,并对其微结构和电性能进行了测试、表征分析。与用传统的固相法制成的压敏电阻片进行对比表明,Sol-Gel法制成的元件内部粒度分布范围窄,添加剂元素分布均匀。其电性能较固相法也有了很大改善：Sol-Gel法制备的样品的压敏电压梯度和非线性系数大于传统试样,漏电流小于传统试样,8/20μs通流能力也得到了改善。当把Mn2O3、NiO、Bi2O3、Co3O、SnO2多元氧化物粉体引入ZnO压敏电阻的制备工艺时,得到的压敏电阻器的综合电性能最好,这时压敏电压梯度VlmA=516V/mm,非线性系数α=43,漏电流IL=2μA,残压比K=1.78,在耐受8/20μs脉冲电流后压敏电压变化率△VlmA/VlmA=4.41%。
[Abstract]:ZnO varistor has been widely used in electric power and electronic field because of its excellent nonlinear volt ampere characteristics and transient surge current absorption capacity. It is a difficult problem to improve the voltage sensitive voltage gradient of ZnO varistor ceramics and increase the current flow capacity. This paper aims to ensure that other electrical properties are excellent. On the basis of the study, the ZnO varistor is prepared by the solid-phase method and the sol-gel method in the same condition, and the influence of the formula and process on the microstructure and electrical properties of the ZnO varistor is studied by the solid-phase method and sol-gel method. The traditional solid phase method is used first. Three series of Bi2O3, SnO2 and Sb203 doped ZnO varistor samples were prepared respectively. The microstructures in the components were analyzed by scanning electron microscope. The voltage sensitive voltage gradient, nonlinear system number and leakage current of Bi2O3, SnO2 and Sb203 doped ZnO based varistors with different molar content were measured, and the residual pressure ratio and voltage sensitive voltage change were calculated. The effect of the content of three additives on the microstructure and electrical properties of the ZnO varistor is discussed. The experimental results show that the pressure sensitive voltage gradient and nonlinear coefficient of the ZnO varistor increase first and then decrease with the increase of the Bi203 doping amount, and the leakage current decreases first and then increases, when the amount of Bi203 adding is 0.310 mo1%, the sample is set. The bulk electric performance is the best: pressure sensitive voltage gradient VlmA=435V/ mm, nonlinear coefficient alpha =42, leakage current IL=3 A, residual pressure ratio K=1.96, voltage sensitive voltage variation rate Delta VlmA/VlmA=4.89% after 8/20 and Mu s pulse current. With the decrease of Sn02 content, the pressure sensitive voltage gradient and nonlinear coefficient of ZnO varistor gradually decrease and leakage current increases gradually. When the Sn02 doping amount is 0.574mo1%, the sample has the best comprehensive electrical properties: the voltage sensitive voltage gradient VlmA=408V/mm, the nonlinear coefficient alpha =34, the leakage current IL=5 micron A, the residual pressure ratio K=2.02, the voltage sensitive voltage variation rate Delta VlmA/VlmA=9.13% after the tolerance 8/20 and the US pulse current, and the pressure sensitive voltage gradient of the ZnO varistor with the Sb203 doping amount increasing. When the nonlinear coefficient decreases first and then increases, the leakage current increases first and then decreases. When the Sb203 doping amount is 0.572 mo1%, the synthetic electrical performance of the sample is the best: the voltage sensitive voltage gradient VlmA=420V/mm, the nonlinear coefficient alpha =38, the leakage current IL=3 A, the residual pressure ratio K=2.01, and the voltage sensitive voltage change rate after the 8/20 micron s pulse current Delta VlmA/VlmA=7.58%. then VlmA/VlmA=7.58%. then will be followed by VlmA/VlmA=7.58%. next Mn2O3, NiO, Bi2O3, Co3O4 multiple oxide powders and Mn2O3, NiO, Bi2O3, Co3O4, SnO2 multiple oxide powders were introduced into the preparation process of ZnO pressure sensitive element, respectively. First, the compound powder of four (five) metal oxide composite powder was prepared, and then mixed with several other oxide additives and main materials. Under the suitable conditions, a piezresistor slice with a thickness of about 1.0mm and a diameter of about 8.8 mm was prepared. The microstructures and electrical properties of the piezresistor were tested and characterized. Compared with the varistors made from the traditional solid phase method, the size distribution of the components in the components of the Sol-Gel method was narrow and the additive elements were evenly distributed. The electric performance has also been greatly improved by the solid-phase method: the voltage gradient and nonlinear coefficient of the sample prepared by the Sol-Gel method are larger than the traditional sample, the leakage current is less than the traditional sample, and the flow ability of the 8/20 Mu s is also improved. When Mn2O3, NiO, Bi2O3, Co3O, SnO2 multiple oxide powders are introduced into the preparation process of the ZnO varistor, the pressure is obtained. The comprehensive electrical performance of the resistor is the best, the voltage sensitive voltage gradient VlmA=516V/mm, the nonlinear coefficient alpha =43, the leakage current IL=2 A, the residual pressure ratio K=1.78, and the voltage sensitive voltage variation rate Delta VlmA/VlmA=4.41%. after the tolerance 8/20 Mu s pulse current.

【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM54

【共引文献】